Allicdata Part #: | MDS140L-ND |
Manufacturer Part#: |
MDS140L |
Price: | $ 136.68 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 500W 12A 55AW1 |
More Detail: | RF Transistor NPN 70V 12A 1.03GHz ~ 1.09GHz 500W C... |
DataSheet: | MDS140L Datasheet/PDF |
Quantity: | 1000 |
25 +: | $ 124.25800 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 70V |
Frequency - Transition: | 1.03GHz ~ 1.09GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 9.5dB |
Power - Max: | 500W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 1A, 5V |
Current - Collector (Ic) (Max): | 12A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55AW |
Supplier Device Package: | 55AW |
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RF transistors are an essential component of any system that is used to transmit or receive radio frequency signals in a wide range of applications such as radio communications, television, and radar. While there are a variety of different transistors used in RF applications, the MDS140L is one of the most popular. This transistor combines the features of a lateral MOSFET and a bipolar junction transistors, offering high gain and excellent RF performance in a small package.
MDS140L Application Field
The MDS140L is a versatile transistor that can be used in a wide variety of RF applications. For example, it can be used in RF front-end receivers as a low-noise amplifier, or in power amplifiers to provide high efficiency and power-added efficiency. These transistors can also be used in high-frequency switching applications and for frequency-hopping radios. Additionally, the MDS140L can be used in MMIC circuits, where it provides high gain and harmonic rejection.
MDS140L Working Principle
The MDS140L is a lateral MOSFET-bipolar junction transistor (MOSFET-BJT) hybrid device which is designed to provide excellent RF performance in a small form factor. It utilizes a MOSFET transistor for the input stage and a bipolar transistor for the output stage, resulting in high gain and excellent linearity. Moreover, the MDS140L boasts a low input capacitance and high output impedance, making it suitable for use in high-frequency circuits such as RF receivers and transmitters.
The MDS140L features a cascade structure which minimizes the effect of device matching and enables the device to achieve stable gain over a wide frequency range. Additionally, the device is designed to minimize base-emitter capacitance, thereby reducing distortion and providing better RF performance. The MDS140L is designed to operate in Class A, B or AB mode, offering circuit designers flexibility in the way the device is used.
The MDS140L is a low-cost, high-performance solution for a broad range of applications in the RF domain. It is a suitable device for many applications where cost, size, and weight are critical factors. Additionally, the MDS140L offers good RF performance, excellent harmonic rejection, and stable gain over a wide frequency range.
The specific data is subject to PDF, and the above content is for reference
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