
Allicdata Part #: | MDS150-ND |
Manufacturer Part#: |
MDS150 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 350W 4A 55AW1 |
More Detail: | RF Transistor NPN 60V 4A 1.03GHz ~ 1.09GHz 350W Ch... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 60V |
Frequency - Transition: | 1.03GHz ~ 1.09GHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 10dB |
Power - Max: | 350W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 500mA, 5V |
Current - Collector (Ic) (Max): | 4A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | 55AW |
Supplier Device Package: | 55AW |
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The MDS150 application field and working principle covers the use of radio frequency (RF) bipolar junction transistors (BJTs) in a variety of communication systems. MDS150 are capable of high-gain gain, high-power dissipation, good frequency stability, and low noise amplification. This article will discuss these working principles and applications of the MDS150.
The working principle of the MDS150 is based on the fundamentals of BJT operation. In a BJT circuit, the flow of current is dependent on the base-emitter voltage and the collector-base voltage. When an input voltage is applied to the base of the transistor, current flows from the emitter to the collector. This results in a change in voltage at the collector, as well as a change in current at the emitter. The changing voltages and currents at the collector and emitter of the transistor will then be used to amplify the input signal.
The MDS150 is primarily used in radio frequency (RF) applications. It has a wide range of uses, including in communication systems, for frequency synthesis, in digital signal processing, and as a mixer for a variety of signals. It is capable of providing a gain of up to 40dB, as well as a low noise figure of less than 0.5dB. Due to its high performance, the MDS150 is often the preferred transistor for RF applications.
The MDS150 exhibits excellent frequency stability, with a gain bandwidth of 4GHz and a DC to 4GHz tuning range. This makes it ideally suited for applications such as HF, VHF, and UHF radio communication. The MDS150 also offers high power dissipation, with a maximum power dissipation rating of 100W, which makes it suitable for applications requiring high-power requirements.
In communication systems, the MDS150 can be used as a low-noise amplifier (LNA) or amplifier-mixer module. In HF, VHF and UHF communications, it is used as the mixer in a frequency synthesizer. As a mixer, it is capable of producing complex signals for use in digital signal processing. In digital signal processing, the MDS150 can be used as a first-stage amplifier or signal compressor.
The MDS150 is also used as an RF signal generator, making it an ideal choice for a variety of communication systems. It is capable of providing a controllable output for applications where long-range signal transmission is required. The MDS150 also offers superior performance in HF radio communication, making it a preferred choice for HF radio modulation.
In terms of application field, the MDS150 is often used in telecom and CATV systems, as well as in both fixed and mobile radio applications. In the CATV system, it is used as the main amplifier in the signal distribution network. In the telecom system, it is mainly used as a mixer in frequency conversions. The MDS150 is also used in automotive and medical applications, where its high power dissipation and low noise figure make it an ideal choice.
The MDS150 is a versatile RF bipolar junction transistor that can be used in a variety of applications. Its combination of high gain, high-power dissipation, good frequency stability, and low noise makes it the preferred choice for many applications. It is an ideal choice for use in HF, VHF, and UHF communication systems and can provide superior performance in digital signal processing.
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