MEST2G-150-10-CM32 Allicdata Electronics
Allicdata Part #:

1702-1001-ND

Manufacturer Part#:

MEST2G-150-10-CM32

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: M/A-Com Technology Solutions
Short Description: COM RF SWITCH-PACKAGE-CM32
More Detail: RF Diode PIN - Single 500mA CM32
DataSheet: MEST2G-150-10-CM32 datasheetMEST2G-150-10-CM32 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: PIN - Single
Voltage - Peak Reverse (Max): --
Current - Max: 500mA
Capacitance @ Vr, F: 0.5pF @ 50V, 1MHz
Resistance @ If, F: 220 mOhm @ 100mA, 100MHz
Package / Case: CM32
Supplier Device Package: CM32
Description

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The MEST2G-150-10-CM32 is an RF diode which can be used in various applications. This component is a highly reliable, low-cost replacement for a similar component in any device or circuit. It is a type of diode which is specifically designed to transfer a signal from one point to another within a system, or to impede it. The fact that it has a peak power rating of 150 watts, and an average power rating of 10 watts, is enough to make it suitable for RF applications where low-to-moderate levels of power are required.

The MEST2G-150-10-CM32 is an ideal choice for a range of radio-frequency applications. Its low-cost and high reliability make it an attractive component for commercial and industrial RF applications, such as radio and television receivers, transmitters and amplifiers. Its relatively low power-handling capability and fast switching speed makes it suitable for applications such as mobile phones, wireless LANs and land mobile radios. It can also be used in the transmission and reception of digital data signals.

The working principle of the MEST2G-150-10-CM32 is based on a simple but effective design. In essence, it acts as a switching device which can control the flow of a signal from one point to another. Its construction consists of a pair of lightly doped P-type silicon layers and one N-type layer that are connected to a base material. When the gate terminal is supplied with a positive voltage, electrons accumulating in the depletion region cause a negative potential to be established in the gate and the resulting voltage drop causes current to flow in one direction through the device.

In addition to its use in RF applications, the MEST2G-150-10-CM32 can also be used in a wide variety of other applications. Its ability to handle relatively high power and voltage make it an excellent choice for power conversion and switch-mode power supplies. The diode can also be used in digital logic and control circuits, where it can be used as an RF switch or a source of digital signals. In automotive applications, it can be used as an effective replacement for a relay or switch, providing reliable switching with low power consumption.

The MEST2G-150-10-CM32 is a versatile, cost-effective and highly reliable diode which can be used in many different applications. Its superior capability in switching and handling high power and voltage levels make it an ideal choice for radio-frequency applications and a range of other applications. It is designed for years of reliable service and is an excellent choice for engineers looking for low-cost and reliable components.

The specific data is subject to PDF, and the above content is for reference

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