MG052S18A400DP Allicdata Electronics
Allicdata Part #:

478-10731-2-ND

Manufacturer Part#:

MG052S18A400DP

Price: $ 0.36
Product Category:

Circuit Protection

Manufacturer: AVX Corporation
Short Description: TVS DIODE 18V 42V 0508
More Detail: N/A
DataSheet: MG052S18A400DP datasheetMG052S18A400DP Datasheet/PDF
Quantity: 2000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1000 +: $ 0.33439
2000 +: $ 0.31210
5000 +: $ 0.29723
Stock 2000Can Ship Immediately
$ 0.36
Specifications
Voltage - Clamping (Max) @ Ipp: 42V
Supplier Device Package: 0508 (1220 Metric)
Package / Case: 0508 (1220 Metric)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C (TA)
Capacitance @ Frequency: 225pF @ 1MHz
Power Line Protection: No
Power - Peak Pulse: --
Current - Peak Pulse (10/1000µs): 30A
Series: --
Voltage - Breakdown (Min): 25.5V (Typ)
Voltage - Reverse Standoff (Typ): 18V
Bidirectional Channels: 2
Type: Zener
Part Status: Active
Moisture Sensitivity Level (MSL): --
Packaging: Tape & Reel (TR) 
Description

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TVS-Diodes is a specialized passive component that offer surge and ESD protection with clamping action in order to limit damage from transient surges such as lightning or electrostatic discharge. MG052S18A400DP is one of the series of TVS-Diodes. It is a bidirectional TVS device designed to protect data lines from transients occurring in electronic systems.

The MG052S18A400DP series of TVS-Diode is designed for use in industrial system applications such as communication, industrial control, data com systems, digital signal lines and consumer electronics. It consists of a pair of back-to-back avalanche diodes connected to a common terminal.

MG052S18A400DP provides a low capacitance of 0.06 pF for minimal signal distortion. It is a bidirectional device; when exposed to transient voltage, the anode of the diode will be connected to the voltage higher than the cathode. This can prevent both overvoltage and transients from entering the system. This diode can tolerate a maximum operating voltage of 18V and maximum surge current up to 400A.

The working principle of MG052S18A400DP is based on the properties of avalanche breakdown. An avalanche diode, or an avalanche semiconductor, describes the breakdown phenomenon caused by the collision of carrier particles in the semiconductor device. When a reverse bias voltage is applied to the diode, the electric field becomes strong, resulting in an avalanche breakdown of the p-n junction. This causes a dramatic increase in the reverse current and the production of hole-electron pairs which further promotes the avalanche effect.

MG052S18A400DP is able to limit the voltage and current by utilizing the avalanche breakdown effect immediately after the voltage or current rises to a certain level. The anode and cathode are connected to terminals to protect systems from transient overvoltages. The diode will be in a blocking or inhibited state under normal operating conditions. However, when exposed to voltage transients above the breakdown threshold, it will immediately enter into an avalanche current conduction state, providing protection for the system.

In summary, MG052S18A400DP is a series of TVS-Diodes designed for industrial system applications and data communication. It works by leveraging the breakdown effect of its anode and cathode p-n junction in order to protect systems from overvoltage transients. This component is able to protect systems from overvoltage events with its bidirectional devices and low capacitance for minimal signal distortion.

The specific data is subject to PDF, and the above content is for reference

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