MJ14002G

Series:	--
Packaging:	Tray
Part Status:	Active
Transistor Type:	NPN
Current - Collector (Ic) (Max):	60A
Voltage - Collector Emitter Breakdown (Max):	80V
Vce Saturation (Max) @ Ib, Ic:	3V @ 12A, 60A
Current - Collector Cutoff (Max):	1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	15 @ 50A, 3V
Power - Max:	300W
Frequency - Transition:	--
Operating Temperature:	-65°C ~ 200°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-204AE
Supplier Device Package:	TO-3

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MJ14002G Application Field and Working Principle

The MJ14002G is a kind of Bipolar Junction Transistor (BJT), more particularly a NPN-type silicon epitaxial planar transistor commonly used in different electronic circuits. It features outstanding switching and amplification along with acceptable gain-bandwidth high speeds. Due to its advantages, this type of transistor has been widely used in a variety of switching and amplifying applications, such as industrial and automotive applications, audio frequency amplifiers, feedback circuits, etc.To better understand the MJ14002G, let\'s look at its application field and working principle.

Application Field

The MJ14002G is an NPN bipolar junction transistor commonly used for linear, low noise, medium power applications, such as in audio frequency amplifiers, feedback circuits, and other amplifying/switching applications. Besides, it also features a high frequency of operation and it is suitable for high current and low-level signal operation. Due to its outstanding performance, this type of transistor is frequently used in many audio-related applications, such as amplifying and switching operations. For example, when connected with high-voltage, it is able to switch on or off the signal depending on the current flowing through it. As far as audio frequency amplifiers, the transistor is ideal to be used as a buffer amplifier and polarity inversion, because it features a high gain-bandwidth product.

Working Principle

As with any other BJT, the MJ14002G has three main components: the collector, the base, and the emitter. These electrodes are connected in an NPN configuration and the current flows through these components in a particular manner. First of all, when a small voltage is applied to the base, some current is injected into the base region. This current in the base is then amplified and creates a strong current flow between collector and emitter electrodes. This current flow is what is referred to as the collector current and it is responsible for creating the amplified signal. The collector-emitter voltage can be varied depending on the applied base voltage. Thus, by controlling the base voltage, it is possible to change the current flowing through the transistor and, consequently, the voltage across the collector and emitter electrodes. This process is what is responsible for the amplification of the signal.

Conclusion

The MJ14002G is an NPN-type transistor with remarkable switching and amplifying properties. It is most suitable for audio amplifying and switching operations, making it a great choice for audio frequency amplifiers and feedback circuits. Its working principle is based on the flow of current through the three main electrodes (collector, base, and emitter) in an NPN configuration. The collector current is responsible for the amplified signal, and it is controlled by the base voltage.

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