
MJB5742T4G Discrete Semiconductor Products |
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Allicdata Part #: | MJB5742T4GOSTR-ND |
Manufacturer Part#: |
MJB5742T4G |
Price: | $ 1.23 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN DARL 400V 8A D2PAK |
More Detail: | Bipolar (BJT) Transistor NPN - Darlington 400V 8A ... |
DataSheet: | ![]() |
Quantity: | 1000 |
800 +: | $ 1.11723 |
1600 +: | $ 0.92569 |
2400 +: | $ 0.86186 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Darlington |
Current - Collector (Ic) (Max): | 8A |
Voltage - Collector Emitter Breakdown (Max): | 400V |
Vce Saturation (Max) @ Ib, Ic: | 3V @ 400mA, 8A |
Current - Collector Cutoff (Max): | -- |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 4A, 5V |
Power - Max: | 100W |
Frequency - Transition: | -- |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | D2PAK |
Base Part Number: | MJB5742 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The BJT type MJB5742T4G is a bipolar (BJT) transistor which is used for general switching and amplification purpose. This type of transistor is widely used for its flexibility, low power consumption and cost-effectiveness. The MJB5742T4G can be used in many applications such as audio-frequency (AF) amplifiers, radio-frequency (RF) amplifiers, low-noise amplifiers and many other electronic devices.
A bipolar transistor consists of three semiconductor layers (base, collector and emitter) which are arranged in a vertical row. The base is the control point for the transistor and the current flowing between the base and the collector determines the current flowing from the collector to the emitter. When a small current is applied to the base, the larger current flowing between the collector and the emitter is amplified. This basic function of a BJT is the basis for a wide range of applications.
The MJB5742T4G can be used as a digital switch and can be used in the construction of logic circuits. When the base current is increased, the current flowing through the collector-emitter junction is switched on, thereby providing a signal which can be used to control other electronic components. In addition, the MJB5742T4G can also be used as an amplifier, providing an increase in signal strength, or as a voltage regulator.
The MJB5742T4G has a low power consumption and is cost-effective compared to other bipolar transistors. This makes it an ideal choice for a wide range of applications, including high-frequency transistor radio control, audio amplifiers, medical devices and portable power supply circuits. In addition, the MJB5742T4G can also be used in computer or electronics applications for digital signal processing.
The working principle of the MJB5742T4G involves two major areas; the base current and the collector-emitter current. When the base current is increased, the current between the collector and the emitter is increased and a voltage drop is created between the two points. This voltage drop determines the output voltage and thus the current flowing between the collector and the emitter. The collector current is then used to provide the output signal.
In summary, the MJB5742T4G is a bipolar transistor which is used for a wide range of applications. It offers high current gain and low power consumption, making it an ideal choice for many electronic applications. The working principle of this type of transistor involves the base current controlling the current between the collector and the emitter, resulting in an amplified voltage drop and output signal.
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Part Number | Manufacturer | Price | Quantity | Description |
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MJB5742T4G | ON Semicondu... | 1.23 $ | 1000 | TRANS NPN DARL 400V 8A D2... |
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