MJF6668

Introduction

The MJF6668 is an NPN silicon bipolar junction transistor (BJT) designed for active-region voltage and current amplifier applications. It is typically used in switching and linear power applications. In its list of features, the MJF6668 transistor offers high output impedance, large breakdown voltage, and power rating of up to 600W. Its high gain and large safe operating area make it a suitable device for audio, small signal, and power applications.

Package

The MJF6668 comes in a surface mount package and is available in a TO-220 full-pack (2 leads). Its dimensions are 2.2mm x 22.2mm x 7.4mm. The transistor has two pins for connection: the collector (C) and emitter (E).

Application Field and Working Principle

The MJF6668 transistor is designed to function as a voltage and current amplifier in active-region applications. It can be used to increase the current carrying capability of circuits and can also be used as a switch in power and signal applications. The MJF6668 transistor works on the principle of a voltage-controlled current source. As the base voltage increases, the collector current increases as well.
The MJF6668 has various applications. It can be used in audio amplifiers, linear power converters, DC-DC converters, switching power supplies, inverters and class D audio amplifiers. It is also used in low-noise amplifiers, logic circuits, microcontrollers and switching applications. The MJF6668 can also be used in high voltage, high power applications such as power amplifiers and RF power amplifiers.

Properties and Characteristics

The MJF6668 transistor is a high gain, low noise device. It has a maximum current gain of 400, a maximum collector-emitter voltage of 600V and a maximum collector power dissipation of 600W. Its breakdown voltage, junction capacitance and collector leakage current are also very good. Its low power rating makes it suitable for low-power applications. In addition, the MJF6668 transistor has high energy savings due to its low on-state resistance.

Conclusion

The MJF6668 is an NPN bipolar junction transistor designed for active-region voltage and current amplifier applications. It has a high gain, low noise, and a high breakdown voltage. Its low power rating makes it suitable for low-power applications, while its low on-state resistance enables it to save energy. The MJF6668 can be used in audio amplifiers, linear power converters, DC-DC converters, switching power supplies, inverters and class D audio amplifiers.

MJF6668	ON Semicondu...	--	1000	TRANS PNP DARL 100V 10A T...
MJF6388	ON Semicondu...	0.0 $	1000	TRANS NPN DARL 100V 10A T...
MJF6388G	ON Semicondu...	1.11 $	2488	TRANS NPN DARL 100V 10A T...
MJF6668G	ON Semicondu...	0.0 $	1000	TRANS PNP DARL 100V 10A T...