MJW3281AG

The MJW3281AG is a bipolar junction transistor (BJT) specifically designed for microwave low noise amplifier applications. It offers the best linearity performance in its power class and is provided in a small package. The single-ended configuration of the MJW3281AG makes it easy to use in a variety of wireless, satellite and space applications.

The MJW3281AG has a collector-base breakdown voltage of 100V, a collector-emitter rated voltage of 80V, and maximum operating current of 4A. The on-chip emitter degeneration resistor provides excellent stabilization in gain and noise figure. A built-in temperature sensing circuit allows for temperature compensation.

The MJW3281AG is suitable for applications such as low noise amplifiers (LNAs), wideband amplifiers, attenuators, microwave receivers and transceivers, and digital TV front ends. Its small package and low power dissipation make it suitable for portable devices and hand-held applications.

The MJW3281AG is a NPN transistor. It consists of three layers of semiconductor material: a silicon P-type base, an N-type collector, and an N-type emitter. The electrical circuit is arranged so that the emitter is connected to the negative terminal of the power source, the collector is connected to the positive terminal of the power source, and the base is connected to the input signal.

When the base-emitter diode is forward biased, a large current flows through the emitter-base junction, causing a large current to flow across the collector-base junction as well. This current, commonly referred to as the collector current, is the primary measure of the transistor\'s gain. The magnitude of the collector current is proportional to the base current and increases with increasing base current.

The gain of the MJW3281AG is determined by the ratio of the collector current to the base current. This ratio is called the gain-bandwidth product and is typically expressed in GHz. The gain of the MJW3281AG is typically 11dB with a gain-bandwidth product of 2.4GHz.

The output power of the MJW3281AG is determined by the amplification of the input signal. The output power is typically 10dBm and the power added efficiency is typically 7%. The power added efficiency, or PAE, is the measure of the efficiency of the amplifier, and is defined as the ratio of the output power to the input power.

In summary, the MJW3281AG is a NPN, single-ended transistor designed for microwave low noise amplifier applications. It has a collector-base breakdown voltage of 100V and a collector-emitter rated voltage of 80V. The on-chip emitter degeneration resistor provides excellent stabilization in gain and noise figure. The typical gain of the transistor is 11dB with a gain-bandwidth product of 2.4GHz. The output power of the MJW3281AG is typically 10dBm and the power added efficiency is typically 7%.