Allicdata Part #: | MKI50-06A7T-ND |
Manufacturer Part#: |
MKI50-06A7T |
Price: | $ 36.73 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | IXYS |
Short Description: | IGBT H-BRIDGE 72A 600V E2PACK |
More Detail: | IGBT Module NPT Full Bridge Inverter 600V 72A 225W... |
DataSheet: | MKI50-06A7T Datasheet/PDF |
Quantity: | 1000 |
6 +: | $ 33.39210 |
Series: | -- |
Part Status: | Active |
IGBT Type: | NPT |
Configuration: | Full Bridge Inverter |
Voltage - Collector Emitter Breakdown (Max): | 600V |
Current - Collector (Ic) (Max): | 72A |
Power - Max: | 225W |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 50A |
Current - Collector Cutoff (Max): | 600µA |
Input Capacitance (Cies) @ Vce: | 2.8nF @ 25V |
Input: | Standard |
NTC Thermistor: | No |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | E2 |
Supplier Device Package: | E2 |
Base Part Number: | MKI |
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The MKI50-06A7T is an IGBT (Insulated Gate Bipolar Transistor) module that can be used in a wide range of applications due to its low on resistance, low gate charge, fast switching speed and high maximum operating temperature. The module itself consists of a standard Insulated Gate Bipolar Transistor (IGBT) chip, a base plate, two lead frames and two heat sinks. The module is in a molded plastic case with a cover plate to protect the components from outside damage and dust.
The IGBT module works by combining the properties of a bipolar junction transistor and a field effect transistor. It has two distinct terminals - the gate and the collector. When the gate is given a positive voltage, it will cause a current to flow in the collector-emitter junction. This current flow is controlled by the voltage at the gate, meaning that the gate can be used to regulate power to the device.
The MKI50-06A7T is a high power IGBT module, capable of operating up to 50A at 600V. This makes it suitable for a range of applications from AC motor control, HVAC, and Frequency Drives, to Solar Inverters and UPS systems. It is suitable for switching frequencies as high as 8kHz, allowing it to be used in a variety of high-speed switching applications.
The MKI50-06A7T has a low on resistance of 8mΩ, which is beneficial for high frequency applications, and it has a low gate charge of 15nC, allowing it to switch rapidly. It is also able to operate in temperatures up to 175°C, which allows it to be used in a variety of extreme environments.
The MKI50-06A7T is a high power IGBT module designed for a wide range of applications. It combines a low on resistance, low gate charge and high maximum operating temperature with a fast switching speed, making it suitable for a range of AC and DC applications. With its high switching frequency capability and its ability to operate in extreme environments, it is an ideal choice for applications requiring a robust and reliable IGBT module.
The specific data is subject to PDF, and the above content is for reference
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