MKI50-12E7

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Transistors - IGBTs - Modules

The MKI50-12E7 is a high power insulated gate bipolar transistor (IGBT) module designed by Mersen, designed to provide high power efficiency, fast switching response, and best electrical and thermal performance. The MKI50-12E7 employs a high voltage MOSFET die along with a low voltage SiC (silicon carbide) die. The device makes use of hybrid planar technology for improved switching performance and for quick time-to-turn-off response.

Applications

The MKI50-12E7 is used in a wide range of applications, including motor control, power supplies, and power conversion. It is suitable for use in general motor control and switching applications, as well as variable-frequency drives. It can also be used in industrial equipment and appliances, providing high power efficiency and fast switching response, even in harsh environmental conditions.

Working Principle

The MKI50-12E7 is a power semiconductor module comprising an insulated gate bipolar transistor (IGBT) and an electromagnetic interference (EMI) filter. The device utilizes a silicon carbide base chip with field-effect transistors and insulated gate bipolar transistor (IGBT) technology. When the IGBT is turned on, the collector current forms a conductive channel with a voltage drop of 0.9V across the collector and emitter. This reduces both conduction and switching losses, thereby increasing power efficiency and allowing for faster switching responsiveness.

The module\'s EMI filter improves its noise immunity and suppresses any interference from other sources, ensuring better performance and increased protection against unpredictable conditions. The EMI filter also ensures that the output from the device is clean, allowing for the safe operation of the equipment.

The MKI50-12E7 improves the efficiency and performance of motor drives and power supplies, as well as other power conversion equipment. It also provides reliable operation in harsh conditions.

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