MM5Z30V Discrete Semiconductor Products |
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Allicdata Part #: | MM5Z30VTR-ND |
Manufacturer Part#: |
MM5Z30V |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 30V 200MW SOD523F |
More Detail: | Zener Diode 30V 200mW ±7% Surface Mount SOD-523F |
DataSheet: | MM5Z30V Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 30V |
Tolerance: | ±7% |
Power - Max: | 200mW |
Impedance (Max) (Zzt): | 80 Ohms |
Current - Reverse Leakage @ Vr: | 50nA @ 21V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SC-79, SOD-523F |
Supplier Device Package: | SOD-523F |
Base Part Number: | MM5Z30 |
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MM5Z30V is a zener diode, which could be used in a number of different applications and, depending on its intended use, could be considered either a general purpose diode or a power semiconductor. It is designed in a two terminal form and comes in both a single and dual package. This article will discuss the specific application field and working principle of the MM5Z30V.
The MM5Z30V is a 30V zener diode and is used in applications such as voltage regulation and overload protection. It has a wide range of operating temperatures in which it can be employed, ranging from -65°C to +125°C. The diode is also available in various package sizes, ranging from mini DO-35 to a larger, compact SOD-123 size. The diode also has the added benefit of having a low reverse leakage current, at 0.1µA max.
In terms of its working principle, the MM5Z30V is a bipolar diode which includes a thin layer of lightly doped P-type material sandwiched between two N-type layers. The inner P-type layer forms a region in the semiconductor crystal with a very low resistance. When the diode is forward biased, the majority charge carriers in the P-type layer can flow freely, resulting in a low voltage drop across the junction and a large current flow.
When the diode is reverse biased, however, then the majority charge carriers in the P-type layer will be repelled by the reverse electric field and hence the current flow through the diode will be very low. The voltage drop across the junction will also be higher in this region of operation. When the voltage on the reverse biased side of the diode reaches the breakdown voltage (Vz) of the MM5Z30V, then the depletion region will be greatly reduced and the current flow through the junction will increase substantially.
In general terms, when the diode is reverse biased and the applied voltage exceeds the breakdown voltage, then the diode will enter a state of self-regulation. That is, it will regulate the voltage across its terminals so that the voltage across its junction is held constant regardless of the applied voltage or current. It is this characteristic of self-regulation which makes the MM5Z30V suitable for use in voltage regulation and overload protection.
The MM5Z30V can also be used in many other applications as well, such as voltage control, voltage clamping and transient suppression. It can also be used in various switching circuits and noise reduction. Overall, the MM5Z30V is an extremely versatile diode with a wide range of operating temperatures, low reverse leakage current, and a wide range of applications in various industries.
The specific data is subject to PDF, and the above content is for reference
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MM5Z16V | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 16V 200MW SOD... |
MM5Z18V | ON Semicondu... | 0.0 $ | 1000 | DIODE ZENER 18V 200MW SOD... |
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