MMBZ5221BTS-7-F Allicdata Electronics
Allicdata Part #:

MMBZ5221BTS-7-F-ND

Manufacturer Part#:

MMBZ5221BTS-7-F

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER ARRAY 2.4V SOT363
More Detail: Zener Diode Array 3 Independent 2.4V 200mW ±5% SOT...
DataSheet: MMBZ5221BTS-7-F datasheetMMBZ5221BTS-7-F Datasheet/PDF
Quantity: 1000
3000 +: $ 0.08966
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Configuration: 3 Independent
Voltage - Zener (Nom) (Vz): 2.4V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 30 Ohms
Current - Reverse Leakage @ Vr: 100µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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Diodes can be categorized according to their intended purpose, one of which is known as Zener diodes. Zener diodes are used in a variety of applications, such as voltage regulation, current stabilization and over-voltage protection. The MMBZ5221BTS-7-F is a special type of Zener diode array, and its application field and working principle will be discussed below.

MMBZ5221BTS-7-F is a silicon rectifier diode array, comprising two series connected diodes with a common cathode lead and individually accessible anode leads. The device is configured in a DSBGA-10 (Dual-Sided Ball Grid Array) package. This diode array is designed to offer a reverse breakdown voltage of 7V, with an operating temperature of -55°C to 150°C.

The application field of the MMBZ5221BTS-7-F is vast. Owing to its strong reverse breakdown voltage and low thermal resistance, the diode is suitable for voltages up to 8V in applications involving power supply regulation, current stabilization, and protection against over-voltage and transients. The low thermal resistance of the array also facilitates superior power handling. Furthermore, the MMBZ5221BTS-7-F can be integrated in various circuitries requiring a reliable voltage source, such as those in the automotive, telecom, and consumer electronics sectors.

The working principle of the MMBZ5221BTS-7-F is based on the principle of PN-junction diode, where the cathode is negative with respect to the anode, thus allowing an electric current to flow through it when in forward bias. When the same diode is reversed biased, the current will be blocked. However, when a large enough voltage is applied, the electric field across the junctions of the diode will reach a certain point, thus allowing the electrons to cross the junction and generate a small current.

As the voltage increases further, the current increases exponentially. The maximum operation voltage of the MMBZ5221BTS-7-F is 7V, and this reverse breakdown voltage is maintained within the temperature range specified for the array. The Zener effect causes the depletion layer within the junction to be widened substantially, allowing additional current to flow as the voltage increases further. This provides an efficient means of protection against overvoltage and transients.

In conclusion, the MMBZ5221BTS-7-F is a reliable and robust diode array designed to provide superior voltage regulation, current stabilization, and over-voltage protection. The device is suitable for applications involving voltages up to 8V, and is mainly deployed in the automotive, telecom, and consumer electronics sectors. The working principle is based on the Zener effect, where the electric current increases exponentially as the voltage across the junction reaches the reverse breakdown voltage, thus providing efficient protection against over-voltage and transients.

The specific data is subject to PDF, and the above content is for reference

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