MMBZ5260B-E3-18 Allicdata Electronics
Allicdata Part #:

MMBZ5260B-E3-18-ND

Manufacturer Part#:

MMBZ5260B-E3-18

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 43V 225MW SOT23-3
More Detail: Zener Diode 43V 225mW ±5% Surface Mount SOT-23-3
DataSheet: MMBZ5260B-E3-18 datasheetMMBZ5260B-E3-18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.01799
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 43V
Tolerance: ±5%
Power - Max: 225mW
Impedance (Max) (Zzt): 93 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 33V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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The MMBZ5260B-E3-18 is a single zener diode primarily used for voltage regulation, signal mixing, and signal clamping applications. Voltage regulation is the primary purpose for the use of zener diodes. They are used in circuits to maintain a predetermined voltage level and prevent excessive voltage from overloading components. Signal mixing is another common use for zener diodes. Signal mixing is the combining of two or more electrical signals to form a new signal. Signal clamping is the instantaneous manipulation of an electrical signal to a predetermined level.

The MMBZ5260B-E3-18 is capable of withstanding a reverse voltage of 18V. It has a maximum peak power dissipation of 500mW and a maximum forward voltage drop of 2V (at 2A). The maximum clamping voltage is 30V. The device has a breakdown voltage of 9.1V and an operating temperature range of -65°C to 150°C. The device is lead free, halogen free, and RoHS compliant.

The MMBZ5260B-E3-18 is a reverse biased silicon diode. Its forward bias is the depletion mode field effect. The diode is constructed from a lightly doped p-substrate and an n+ junction. In the forward biased mode, current is allowed to flow from the p-substrate to the n+ junction. However, when the diode is reverse biased, the two junctions become isolated and no current can flow. In the zener region of the diode, a very large number of minority carriers are created, which allows a reverse current to flow through the diode. This reverse current is referred to as the "zener" or "avalanche" current.

The MMBZ5260B-E3-18 is used in applications such as voltage regulators, signal mixers, and signal clamps. It is most commonly used as a voltage regulator. In this application, it is used to maintain a predetermined voltage level in a circuit and prevent excessive voltage from overloading components. The diode can also be used in signal mixing applications where it combines two or more electrical signals to form a new signal. It is also useful in signal clamping applications where it is used to clamp a signal to a predetermined voltage level.

In summary, the MMBZ5260B-E3-18 is a single zener diode primarily used for voltage regulation, signal mixing, and signal clamping applications. The device has a breakdown voltage of 9.1V and an operating temperature range of -65°C to 150°C. Its forward bias is the depletion mode field effect, and it is constructed from a lightly doped p-substrate and an n+ junction. The diode is lead free, halogen free, and RoHS compliant.

The specific data is subject to PDF, and the above content is for reference

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