MMBZ4687-G3-08 Allicdata Electronics
Allicdata Part #:

MMBZ4687-G3-08-ND

Manufacturer Part#:

MMBZ4687-G3-08

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 4.3V 350MW SOT23-3
More Detail: Zener Diode 4.3V 350mW ±5% Surface Mount SOT-23-3
DataSheet: MMBZ4687-G3-08 datasheetMMBZ4687-G3-08 Datasheet/PDF
Quantity: 1000
15000 +: $ 0.02204
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.3V
Tolerance: ±5%
Power - Max: 350mW
Current - Reverse Leakage @ Vr: 4µA @ 2V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Description

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MMBZ4687-G3-08 Application Field and Working Principle

Introduction

The MMBZ4687-G3-08 is a single, low capacitance, low reverse current Zener diode that is designed for board-level, power supply design applications. This device utilizes a planar diffusion process to ensure consistent and low junction leakage current and a relatively low dynamic impedance at various temperatures. The MMBZ4687-G3-08 is suited for use in portable electronic devices, such as notebook computers, desktops, and laptop computers. The device is also suitable for use in applications that require voltage regulation such as DC-DC converters.

Application Field

The MMBZ4687-G3-08 is widely used in board level power supply design applications. The device is typically used as a voltage regulator in order to provide an output voltage that is regulated and consistent with the system\'s specifications. The device can be used in applications such as DC-DC converters, notebook computers, laptops and desktops. Additionally, the device can be used in automotive applications, such as those that require stability of the output voltage.The device is also typically used in applications that require fast transient response times, such as those found in voltage regulators and DC-DC converters. The low capacitance and low reverse current of the device ensures that the device is capable of handling large voltage and current transients. Additionally, the low dynamic impedance of the device at various temperatures ensures that the device can maintain regulation under varying load conditions.

Working Principle

The MMBZ4687-G3-08 uses a planar diffusion process to achieve a low junction leakage current and a relatively low dynamic impedance at various temperatures. The device is typically connected in the reverse direction of the forward bias. This allows the device to act as a voltage regulator by allowing the excess current to be diverted through the diode instead of allowing it to continue to flow in the forward direction.The Zener diode is a two-terminal semiconductor device that relies on the electric field between two heavily doped regions in order to regulate voltage. When the voltage across the diode exceeds a certain level, known as the breakdown voltage, the electric field increases, causing current to flow through the diode in the reverse direction. The reverse current is limited by the series resistance of the Zener diode and by the dynamic impedance generated by the device at various temperatures.

Conclusion

The MMBZ4687-G3-08 is a single, low capacitance, low reverse current Zener diode designed for board level power supply design applications. The device utilizes a planar diffusion process to ensure consistent and low junction leakage current and a relatively low dynamic impedance at various temperatures. The device is widely used in board level power supply design and voltage regulation applications, such as DC-DC converters and automotive applications. Additionally, the low capacitance and low reverse current of the device ensures that it is suitable for applications that require fast transient response times, such as voltage regulators and DC-DC converters. The working principle of the device is based on the electric field between two heavily doped regions, which allows the device to regulate voltage when the voltage across the device exceeds a certain level.

The specific data is subject to PDF, and the above content is for reference

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