MMBZ5225BS-7 Allicdata Electronics

MMBZ5225BS-7 Discrete Semiconductor Products

Allicdata Part #:

MMBZ5225BSDITR-ND

Manufacturer Part#:

MMBZ5225BS-7

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER ARRAY 3V SOT363
More Detail: Zener Diode Array 2 Independent 3V 200mW ±5% SOT-3...
DataSheet: MMBZ5225BS-7 datasheetMMBZ5225BS-7 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
30000 +: $ 0.05253
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Power - Max: 200mW
Base Part Number: MMBZ5225BS
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Current - Reverse Leakage @ Vr: 50µA @ 1V
Impedance (Max) (Zzt): 30 Ohms
Series: --
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 3V
Configuration: 2 Independent
Moisture Sensitivity Level (MSL): --
Part Status: Discontinued at Digi-Key
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The MMBZ5225BS-7 is a two-terminal Zener diode array that provides very low on-chip capacitance and low reverse leakage. It offers higher power dissipation and a better temperature coefficient than a single diode. It can provide a good temperature stability across a wide temperature range and good avalanche capability.

Application Field

MMBZ5225BS-7 diodes are commonly used for a variety of applications such as voltage regulation, automotive under-the-hood, handheld, laptop and notebook computers, digital displays, and power regulators. They are also used in high frequency switching, power management applications, over-voltage protection and other applications that require high reliability and durability.

Working Principle

The MMBZ5225BS-7 diode array is based on the Zener breakdown principle. Zener breakdown is a phenomenon in which a high electric field breakdown occurs in a reverse-biased junction, resulting in a device that looks like a conventional diode but exhibits reverse breakdown behavior. The Zener diode provides a low voltage drop and low reverse current while allowing conduction during the reverse bias. The device features an epitaxial zinc oxide layer that is highly resistant to breakdown and has a higher temperature coefficient than an ordinary silicon diode. It also has a high differential resistance that helps minimize switching losses.

The MMBZ5225BS-7 is a multi-diode array with a single common anode and separate cathode connections for each diode. It operates with a forward voltage drop of 0.3 volts, a maximum reverse voltage of 24 volts, and a maximum junction temperature of 175°C. The device can handle a range of currents up to 500mA, making it suitable for higher power applications. The device is packaged in a flat flexible carrier (FFC) package that makes it easy to connect and assemble. The device is manufactured using advanced planar Zener diode technology to ensure reliability and consistency.

The MMBZ5225BS-7 diode array is the ideal choice for applications that require low on-chip capacitance and low reverse leakage, such as voltage regulation, power management, and automotive under-the-hood applications. This diode array is able to provide a low voltage drop and low reverse current, even at high temperatures, making it an excellent choice for a wide variety of applications.

The specific data is subject to PDF, and the above content is for reference

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