MMBZ18VALT1G Circuit Protection |
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Allicdata Part #: | MMBZ18VALT1GOSTR-ND |
Manufacturer Part#: |
MMBZ18VALT1G |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | ON Semiconductor |
Short Description: | TVS DIODE 14.5V 25V SOT23-3 |
More Detail: | N/A |
DataSheet: | MMBZ18VALT1G Datasheet/PDF |
Quantity: | 63000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
Unidirectional Channels: | 2 |
Bidirectional Channels: | 1 |
Voltage - Reverse Standoff (Typ): | 14.5V |
Voltage - Breakdown (Min): | 17.1V |
Voltage - Clamping (Max) @ Ipp: | 25V |
Current - Peak Pulse (10/1000µs): | 1.6A |
Power - Peak Pulse: | 40W |
Power Line Protection: | No |
Applications: | Automotive |
Capacitance @ Frequency: | -- |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 (TO-236) |
Base Part Number: | MMBZ*A |
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TVS Diodes are widely used in various applications due to their protection capabilities. They can protect sensitive electronic circuits from electrostatic discharge (ESD) transients, lower the power supply\'s inrush current, and mitigate the surge risk which may come from lightning strikes. The MMBZ18VALT1G is a type of TVS diode. It acts as a ESD protection device and is especially suitable for portable devices.
The MMBZ18VALT1G diode consists of a plate and a cathode. The plate is made of doped silicon and the cathode consists of metal-oxide layers. The diode has an SIL (Single In line Package) configuration which makes it ideal for use in high-density circuits. This low capacitance diode is able to suppress transients up to 33V. It features a low stand-off voltage (6V typical) and a low clamping voltage (16V typical). The peak pulse power of the diode is 200W.
The working principle of the MMBZ18VALT1G diode is very simple. When the voltage across the diode exceeds a certain threshold value, the diode starts to conduct. The diode will then clamp the voltage to a safe level, which prevents any damage to the sensitive electronic components due to over-voltage. The diode is designed to operate in a quasi-static protection mode, which means that it is able to protect against multiple voltage pulses of low and medium frequency. It is also able to dissipate some amount of power in the process, thereby protecting the circuit from excessive heat.
The MMBZ18VALT1G diode is mainly used in portable electronic devices, such as cell phones, cameras, and laptops. It is also used in automotive applications, such as LED lighting, Solar Panel Systems, and power supply systems. The diode is also suitable for use in communications, industrial, and automotive applications. It is also compatible with both RoHS and Pb-free soldering processes.
In conclusion, the MMBZ18VALT1G diode is a TVS diode suitable for protection of sensitive electronic circuits from ESD transients, lowering the power supply\'s inrush current, and mitigating the surge risk which may come from lightning. The peak pulse power of the diode is 200W and it features a low stand-off voltage (6V typical) and a low clamping voltage (16V typical). Its main application fields include portable electronic devices, automotive applications, and communications.
The specific data is subject to PDF, and the above content is for reference
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