
Allicdata Part #: | MMBZ5262C-E3-18-ND |
Manufacturer Part#: |
MMBZ5262C-E3-18 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE ZENER 51V 225MW SOT23-3 |
More Detail: | Zener Diode 51V 225mW ±2% Surface Mount SOT-23-3 |
DataSheet: | ![]() |
Quantity: | 1000 |
10000 +: | $ 0.02024 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Voltage - Zener (Nom) (Vz): | 51V |
Tolerance: | ±2% |
Power - Max: | 225mW |
Impedance (Max) (Zzt): | 125 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 39V |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23-3 |
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MMBZ5262C-E3-18 is a single Zener diode device used in many areas of electronics. It is often the most economical choice for producing small signal levels, such as the power supply references used in many circuits. The device offers a wide variety of features, including high peak current, low leakage, and low noise. It can also be used in applications where reverse polarity protection is required. The MMBZ5262C-E3-18 diode is made of a PN junction device that is formed by connecting a P (positive) type silicon material with an N (negative) type silicon material. It uses the resistance of the junction to allow current to flow in one direction, while blocking it in the opposite direction. When forward biased, the current to the P side is lower than the current to the N side, thus providing a non-linear, unipolar diode with a specific voltage designed by each manufacturer.The Zener property of the diode is generated from the reverse bias of the PN junction. The electrons in the N side are repelled away from the junction and result in a depletion region on the junction edge. Increasing the reverse voltage creates a built-in electric field. If the reverse voltage is high enough, the electric field will overcome the binding of electrons to their parent atoms, allowing current to flow in the reverse direction. This Zener effect is commonly used in voltage regulation circuits.The maximum MMBZ5262C-E3-18 reverse voltage is 18V and its current rating is 1.5mA. The device is available in SOT23, 3-pin, and 3 leads configurations. The structure of the device ensures that the thermal runaway is prevented, thus providing a higher power efficiency. In addition, the device has the capability to withstand high surge current. MMBZ5262C-E3-18 has a wide range of applications. It is used in voltage references, voltage multipliers, DC-DC converters, and over-voltage protection circuits. It is also commonly used in various other applications where reverse polarity protection is required.In conclusion, the MMBZ5262C-E3-18 is an efficient and easy-to-use single Zener diode device. Its high peak current allows it to be used for many applications, particularly for low signal levels. Its wide range of features makes it the ideal choice for many of today’s electronic systems.
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