Allicdata Part #: | MMBZ5231BS-7-ND |
Manufacturer Part#: |
MMBZ5231BS-7 |
Price: | $ 0.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE ZENER ARRAY 5.1V SOT363 |
More Detail: | Zener Diode Array 2 Independent 5.1V 200mW ±5% SOT... |
DataSheet: | MMBZ5231BS-7 Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.06521 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Discontinued at Digi-Key |
Configuration: | 2 Independent |
Voltage - Zener (Nom) (Vz): | 5.1V |
Tolerance: | ±5% |
Power - Max: | 200mW |
Impedance (Max) (Zzt): | 17 Ohms |
Current - Reverse Leakage @ Vr: | 5µA @ 2V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Base Part Number: | MMBZ5231BS |
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The MMBZ5231BS-7 is a diodes-zener array created for use in numerous industrial applications. It is characterised by an axial lead design, an operating temperature range between -65 degrees Celsius to +175 degrees Celsius and a power rating of 500mW. The current limit in continuous mode is 300mAmps. The MMBZ5231BS-7 is part of the ON Semiconductor TransZorb family of general purpose line of transient voltage suppression devices.
The application of the MMBZ5231BS-7 is broad, and it can be used in a range of different electrical circuits. It is typically used for integrated circuit protection for local surge, electrostatic discharge and overvoltage impulses, ultimately protecting the circuits and system from failures. MMBZ5231BS-7 can also be utilised in an array design, protecting multiple nodes in the same circuit. It can also be used to reduce the surge current associated with switching.
The principle of operation of the MMBZ5231BS-7 is as follows. When an AC or DC overvoltage is applied at the anode end of the device, a current will be drawn. When the peak value of the input voltage reaches the break-down voltage of the Zener diode, electrons will be “zener-ionized” and injected into the P-N junction. This will cause a rapid increase in the conduction current, limiting the surge voltage. The current through the device will then slowly reduce and return to its original level when the input voltage declines.
The rapid increase in conduction across the P-N junction when an overvoltage is applied will create a heat sink effect, as heat is generated from the junction. This can cause damage to the device and surrounding circuits when the current rise is too high. To prevent this from happening, MMBZ5231BS-7 is embedded in a high thermal resistance material, providing it with increased electrical dissipation whilst maintaining thermal stability.
The MMBZ5231BS-7 is suitable for various applications due to its diverse range of benefits. It offers low clamping current, low temperature coefficient and low power consumption, making it ideal for both high speed and low power circuits. Additionally, it has high voltage build-up capability and can be used as a noise suppressor, further ensuring the safety and reliability of circuits. In conclusion, the MMBZ5231BS-7 is an ideal choice for a range of applications, providing safe and reliable protection from overvoltage.
The specific data is subject to PDF, and the above content is for reference
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