
Allicdata Part #: | MMBZ5235BSDITR-ND |
Manufacturer Part#: |
MMBZ5235BS-7 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE ZENER ARRAY 6.8V SOT363 |
More Detail: | Zener Diode Array 2 Independent 6.8V 200mW ±5% SOT... |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
30000 +: | $ 0.05253 |
Power - Max: | 200mW |
Base Part Number: | MMBZ5235BS |
Supplier Device Package: | SOT-363 |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Current - Reverse Leakage @ Vr: | 3µA @ 5V |
Impedance (Max) (Zzt): | 5 Ohms |
Series: | -- |
Tolerance: | ±5% |
Voltage - Zener (Nom) (Vz): | 6.8V |
Configuration: | 2 Independent |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Discontinued at Digi-Key |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MMBZ5235BS-7 is a part of the Zener Arrays (MMBZ) family of Zener diodes. It is a dual-mode semiconductor device made up of two Zener diode chips, connected in parallel and acting as a single device. This device has a reverse breakdown voltage rating of 5.2 volts (Vr) and a maximum power dissipation of 435 milliwatts.
The MMBZ5235BS-7 offers a variety of features, such as low leakage current, stub-on Zener protection, and common mode transient immunity. It is designed to be used in both power semiconductor and digital logic applications, as well as in many other applications.
The MMBZ5235BS-7 offers high quality and reliable operation in a variety of applications, as it is designed to meet stringent performance requirements. Examples of applications include: automotive power supplies, industrial power supplies, audio/video equipment, and HVAC units.
The working principle of the MMBZ5235BS-7 is based on the junction field-effect transistor (JFET) principle. A JFET is a four-layer semiconductor device which consists of two independent terminals, a gate and a drain/source. The gate voltage is applied to control the current flow between the drain and source by varying the width of a depletion zone (or "pinch-off zone") located between the terminals.
In the case of the MMBZ5235BS-7, the JFET principle is used to control the current that is applied when a reverse voltage is applied to the diode chips. This results in improved efficiency and stability by allowing the device to accurately regulate the current flow profile.
The MMBZ5235BS-7 is designed for use in both AC and DC signal processing and power management applications. It is ideal for power supply applications in consumer electronics, as well as in instrumentation and telecommunications. It is also suitable for automotive applications, where it provides power regulation and voltage/current conversion.
Overall, the MMBZ5235BS-7 provides an excellent solution for a variety of applications where reliable and robust power management is required. It is an ideal choice for those in need of a reliable, efficient, and cost-effective power management solution.
The specific data is subject to PDF, and the above content is for reference
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