MMBZ5236BTS-7-F Allicdata Electronics
Allicdata Part #:

MMBZ5236BTS-7-F-ND

Manufacturer Part#:

MMBZ5236BTS-7-F

Price: $ 0.10
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: DIODE ZENER ARRAY 7.5V SOT363
More Detail: Zener Diode Array 3 Independent 7.5V 200mW ±5% SOT...
DataSheet: MMBZ5236BTS-7-F datasheetMMBZ5236BTS-7-F Datasheet/PDF
Quantity: 1000
3000 +: $ 0.08966
Stock 1000Can Ship Immediately
$ 0.1
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Configuration: 3 Independent
Voltage - Zener (Nom) (Vz): 7.5V
Tolerance: ±5%
Power - Max: 200mW
Impedance (Max) (Zzt): 6 Ohms
Current - Reverse Leakage @ Vr: 3µA @ 6V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Operating Temperature: -65°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
Description

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MMBZ5236BTS-7-F is a semiconductor device designed to be used in a wide range of applications including high voltage protection, voltage regulation, current regulation, and voltage control. The MMBZ5236BTS-7-F operates in the same basic way as other Zener diodes, but is designed with an array of Zener diodes and series-connected resistors that allow for faster actuation and greater dynamic range of regulation. This device is an ideal choice for use in a variety of applications where a high degree of voltage regulation is required.

MMBZ5236BTS-7-F is a high-performance device with a readily available package size of 3-pin SOT-23. Its maximum rated voltage is 40V and its maximum power dissipation is 500mW. Its maximum leakage current is 10µA and its maximum reverse current is 10mA. It is available in a variety of configurations such as surface mount, through hole and SOP. In addition, it comes equipped with an integrated NPN transistor to signal the point at which the device’s voltage regulation has been exceeded.

The device’s working principle is based on the Zener voltage breakdown effect. When a reverse bias voltage is applied to the diode, an electric field is generated between the diode’s anode and cathode. As the applied voltage increases, the field intensity increases and the current flowing through the diode also increases. It eventually reaches a point where the electric field intensity is high enough to cause an avalanche breakdown, resulting in an abrupt increase in the current flowing through the diode. This is the Zener voltage breakdown point. When the voltage exceeds the Zener voltage, the device regulates the current between its anode and cathode, keeping it at a specified level.

The MMBZ5236BTS-7-F can be used in a wide range of applications including voltage and current regulation, surge protection, voltage limiting, and transient suppression. It can be used in consumer electronics, automotive electronics, telecommunications, power supplies, computers, and industrial controls. It is also suitable for use in low-cost consumer applications. This device is an ideal choice for applications with high voltage regulation requirements and tight space constraints.

In summary, the MMBZ5236BTS-7-F is an excellent choice for applications that require high voltage regulation but have space or cost constraints. It offers a robust performance and an array of Zener diodes and series-connected resistors that allow for faster actuation and greater dynamic range of regulation. It is available in a variety of package sizes, configurations and has an integrated NPN transistor for point regulation. Its maximum voltage rating is 40V and its maximum leakage current is 10µA. This device is ideal for use in a wide range of applications where voltage regulation is required.

The specific data is subject to PDF, and the above content is for reference

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