Allicdata Part #: | MMBZ5255BSDITR-ND |
Manufacturer Part#: |
MMBZ5255BS-7 |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE ZENER ARRAY 28V SOT363 |
More Detail: | Zener Diode Array 2 Independent 28V 200mW ±5% SOT-... |
DataSheet: | MMBZ5255BS-7 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
30000 +: | $ 0.05253 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Discontinued at Digi-Key |
Moisture Sensitivity Level (MSL): | -- |
Configuration: | 2 Independent |
Voltage - Zener (Nom) (Vz): | 28V |
Tolerance: | ±5% |
Power - Max: | 200mW |
Impedance (Max) (Zzt): | 44 Ohms |
Current - Reverse Leakage @ Vr: | 100nA @ 21V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -65°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | SOT-363 |
Base Part Number: | MMBZ5255BS |
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The MMBZ5255BS-7 is an array of Zener diodes from Diodes Inc., a leading supplier of semiconductor and system solutions. This diode array includes an isolated package for the zener diodes with a low leakage path to help reduce EMI noise. It is designed for applications such as circuit protection on power supplies, RF power amplifiers, and signal conditioning circuits.
The diodes in the MMBZ5255BS-7 are zener diodes, which are used for regulation or signal conditioning. A zener diode has a larger than normal reverse breakdown voltage, which is the voltage at which a reversed-bias diode breaks down. When the voltage increase on a zener diode reaches the zener voltage (Vz) the diode begins to break down and starts to conduct in the reverse direction. This allows current to flow in the reverse direction, which will regulate the voltage across the diode to the Zener voltage.
The MMBZ5255BS-7 has a low forward voltage drop (VF) of 1.2 V and a reverse leakage current (IR) of 10 μA at 5 V. It is rated for an operating temperature range of -40°C to +125°C, and it is housed in a small SOD-323 package that is low in profile for improved design flexibility. The MMBZ5255BS-7 is a cost-effective solution for applications requiring voltage regulation, signal conditioning, and other protection circuitry.
The working principle underlying Zener diode arrays, such as the MMBZ5255BS-7, is simple. Voltage regulation is achieved by increasing or decreasing the current in the array. When the load increases, the current flowing through the array increases and the voltage across the zener diodes increases as well. When the load decreases, the current in the array also decreases, and the voltage across the zener diodes decreases. This allows the diodes to regulate the voltage across the array, even under changing conditions.
Zener diode arrays provide a great deal of design flexibility, allowing engineers to easily incorporate them into a variety of applications. They are ideal for regulating voltage in power supplies, RF power amplifiers, and signal conditioning circuits, as well as providing protection from over-voltage and over-current conditions. This makes the MMBZ5255BS-7 a great choice for circuit protection and voltage regulation applications in a wide variety of products.
In addition to providing voltage regulation, Zener diode arrays can also be used to provide isolation between different electrical components. The MMBZ5255BS-7 array includes an isolated package which ensures that there is no leakage path between the components of the array. This helps to reduce EMI noise and ensures a clean signal is delivered to the end device.
Overall, the MMBZ5255BS-7 is a cost-effective, high-performance Zener diode array solution from Diodes Inc. It provides voltage regulation and circuit protection in a variety of applications, including power supplies, RF power amplifiers, and signal conditioning circuits. Its low forward voltage drop (VF) and reverse leakage current (IR) of 1.2 V and 10 μA at 5 V, respectively, make it a great choice for current projects or future designs.
The specific data is subject to PDF, and the above content is for reference
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