MMDL6050T1G Allicdata Electronics
Allicdata Part #:

MMDL6050T1GOSTR-ND

Manufacturer Part#:

MMDL6050T1G

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: DIODE GEN PURP 70V 200MA SOD323
More Detail: Diode Standard 70V 200mA (DC) Surface Mount SOD-32...
DataSheet: MMDL6050T1G datasheetMMDL6050T1G Datasheet/PDF
Quantity: 201000
3000 +: $ 0.05292
6000 +: $ 0.04763
15000 +: $ 0.04234
30000 +: $ 0.03969
75000 +: $ 0.03528
Stock 201000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 70V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 100mA
Speed: Small Signal =
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100nA @ 50V
Capacitance @ Vr, F: --
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Base Part Number: MMDL6050
Description

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The MMDL6050T1G is a single-stage, low Ir rectifier diode in the SOT-23 surface mounted package. It is commonly used in switched-mode power supply applications for voltage regulation and is also an ideal solution for other power regulation applications. Essentially, the diode serves as a one-way switch for electrical current by allowing current to flow through it in one direction (from anode (positive) to cathode (negative)) while blocking current from flowing in the opposite direction.

Application Field

The MMDL6050T1G is primarily used in applications where low forward voltage drop, low leakage current and low EMI is necessary. It is an ideal component for switching-mode power supplies where there is a need for voltage regulation and can also be used for other power regulation applications. Additionally, the component is suitable for circuits that require low on-state voltage with fast reverse recovery.

Working Principle

The MMDL6050T1G functions in single-stage rectification. A single-stage includes a single p-n junction, which is the most common arrangement for a diode. The diode is specially designed with a low Ir, allowing it to maximize forward current, while maintaining low VF. From an application perspective, the component’s relatively low reverse recovery charge (Qr) is beneficial as it contributes to a low turn-off switching time.

Its p-n junction is designed with a low barrier height and low reverse leakage current, allowing it to function as a low-noise, low-loss rectifier. The component also satisfies circuit requirements for a low-noise, low-failure rectifier. As a result, it can be used in circuits where noise levels or reliability are a concern.

To ensure a stable output and proper operation of the component, it is important to use applied voltages that meet the device specifications. Excessive voltages, regardless of type, can potentially cause damage to the component, leading to copper losses, oxidation layers, and weakened bond wires. High peak voltages may also cause avalanche breakdown of the diode junction, resulting in catastrophic failure.

Finally, the component also has temperature and voltage derating considerations. It is important to consult the device datasheet for more detailed information regarding proper use and operation of the component.

The specific data is subject to PDF, and the above content is for reference

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