Allicdata Part #: | MMS8050-L-TP-ND |
Manufacturer Part#: |
MMS8050-L-TP |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Micro Commercial Co |
Short Description: | TRANS PREBIAS NPN 25V SOT23 |
More Detail: | Bipolar (BJT) Transistor NPN 25V 500mA 150MHz 300m... |
DataSheet: | MMS8050-L-TP Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.03347 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Vce Saturation (Max) @ Ib, Ic: | 600mV @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 50mA, 1V |
Power - Max: | 300mW |
Frequency - Transition: | 150MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SOT-23 |
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MMS8050-L-TP Application Field and Working Principle
MMS8050-L-TP is a single bipolar junction transistor (BJT) which has excellent performance characteristics for a variety of applications. It is a three-terminal device that consists of a collector, base, and emitter. The collector is the semiconductor region from which minority carriers transport into the base, where the main current amplifying action occurs. The base is the middle region of the BJT from where current leaves through the emitter into the external circuit. In essence, the BJT functions as either a switch or an amplifier. It alters the current flowing in the circuit based on the base voltage and is used for a variety of signal processing or signal amplification applications.
The MMS8050-L-TP is a NPN type (negative-positive-negative) BJT, meaning it has a P-type semiconductor material between two N-type semiconductor materials. Other types of BJTs include PNP (positive-negative-positive), which has an N-type material between two P-type materials. The NPN and PNP BJTs differ in their current flow direction. In an NPN transistor, current flows from the collector to the emitter, whereas it is the opposite for a PNP transistor. The type of semiconductor material (N or P) determines current flow direction and polarity.
The MMS8050-L-TP is a versatile device which can be used in both analog and digital applications, such as analog signal amplification, audio amplifiers, switching and power supplies. It can be used as an amplifier by connecting the base to an input signal, the collector to a power supply, and the emitter to ground. When the input signal is an alternating current (AC) signal, it is also known as an AC amplifier. In this configuration, the transistor acts as an impedance matching device, allowing for efficient result achievable with minimum power dissipation.
In switching applications, the MMS8050-L-TP can be used to control the on/off state of an electrical load. The transistor is connected between the load and ground, with the base connected to a logic signal. Depending on the logic signal (high or low), the transistor switches the electrical load on or off. This configuration is also known as a digital switch and is used for controlling lighting, motors, and other electrical devices.
The performance characteristics that make the MMS8050-L-TP suitable for a variety of applications include its high current gain, low noise, high power handling ability, and fast switching speed. Its high current gain feature allows it to amplify small input signals into larger output signals. Its low noise feature helps to eliminate unwanted electrical noise or distortion in the output. Its high power handling ability allows it to switch or amplify high-powered electrical signals without damage. Lastly, its fast switching speed makes it easier and faster to carry out switching operations.
In summary, the MMS8050-L-TP is a versatile single bipolar junction transistor (BJT) with excellent performance characteristics for a variety of applications. It is an NPN type BJT and is suitable for both analog and digital applications. Its performance characteristics include a high current gain, low noise, high power handling capacity, and fast switching speed. It is widely used for amplification, switching, and power supplying applications.
The specific data is subject to PDF, and the above content is for reference
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