MMSD914T1G Discrete Semiconductor Products |
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| Allicdata Part #: | MMSD914T1GOSTR-ND |
| Manufacturer Part#: |
MMSD914T1G |
| Price: | $ 0.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | DIODE GEN PURP 100V 200MA SOD123 |
| More Detail: | Diode Standard 100V 200mA (DC) Surface Mount SOD-1... |
| DataSheet: |  MMSD914T1G Datasheet/PDF |
| Quantity: | 30000 |
| 3000 +: | $ 0.02176 |
| 6000 +: | $ 0.01962 |
| 15000 +: | $ 0.01707 |
| 30000 +: | $ 0.01536 |
| 75000 +: | $ 0.01365 |
| 150000 +: | $ 0.01138 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 100V |
| Current - Average Rectified (Io): | 200mA (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1V @ 10mA |
| Speed: | Small Signal = |
| Reverse Recovery Time (trr): | 4ns |
| Current - Reverse Leakage @ Vr: | 5µA @ 75V |
| Capacitance @ Vr, F: | 4pF @ 0V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | SOD-123 |
| Supplier Device Package: | SOD-123 |
| Operating Temperature - Junction: | -55°C ~ 150°C |
| Base Part Number: | MMSD914 |
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Diodes - Rectifiers - Single
The MMSD914T1G rectifier diode is a single, fast-recovery, high-voltage, low-power rectifier that is both cost-effective and reliable for applications ranging from industrial to automotive. In particular, it is designed for low forward voltage drop, high current forward surge capability and fast reverse recovery time.
Applications
The MMSD914T1G is used in a variety of applications, including ac-dc converters, power supplies, energy-efficient lighting, motor drives, and automotive applications. As a single rectifier, this component is ideal for applications such as variable-speed motor controls, power factor correction, and diode bridge circuits. Furthermore, the MMSD914T1G can be used as a freewheeling diode or as a snubber diode in switch-mode power supplies (SMPS).
Construction
The MMSD914T1G is a surface mount rectifier diode housed in a SOD-323 package and constructed from silicon-carbon epoxy encapsulators. It contains a single semiconductor substrate composed of a P
The specific data is subject to PDF, and the above content is for reference
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