Allicdata Part #: | MMSZ5222BT1-ND |
Manufacturer Part#: |
MMSZ5222BT1 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | DIODE ZENER 2.5V 500MW SOD123 |
More Detail: | Zener Diode 2.5V 500mW ±5% Surface Mount SOD-123 |
DataSheet: | MMSZ5222BT1 Datasheet/PDF |
Quantity: | 1000 |
18000 +: | $ 0.02182 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Voltage - Zener (Nom) (Vz): | 2.5V |
Tolerance: | ±5% |
Power - Max: | 500mW |
Impedance (Max) (Zzt): | 30 Ohms |
Current - Reverse Leakage @ Vr: | 100µA @ 1V |
Voltage - Forward (Vf) (Max) @ If: | 900mV @ 10mA |
Operating Temperature: | -55°C ~ 150°C |
Mounting Type: | Surface Mount |
Package / Case: | SOD-123 |
Supplier Device Package: | SOD-123 |
Base Part Number: | MMSZ5222B |
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The MMSZ5222BT1 is an example of a single Zener diode (or Z-diodes), which is designed to withstand high reverse voltage. Z-diodes are typically used in a variety of applications and are most commonly used as a voltage regulator, surge and transient protectors, or ESD (electro-static discharge) suppressors. The MMSZ5222BT1 is a small-signal Zener diode with Voltage Regulator (VR) ratings of 5.1-5.6V @ 500mW Power Dissipation, and a peak current rating of 1A. It works transfer voltage to the predetermined voltage when the device is subjected to excessive reverse current in order to protect a circuit. In short, MMSZ5222BT1 has a breakdown voltage of 5.4 volts with a current capacity of 500 mW, making it well suited for applications such as consumer electronics, automotive, telecommunication and measurement instrumentation.
The working principle of Zener diodes are based on the principle of avalanche breakdown. The breakdown voltage of a Zener diode occurs when the electric field across the Zener junction becomes high enough to cause free electrons to be accelerated to the middle of the reverse-bias diode junction, where they interact with atomic nuclei. This causes an avalanche effect, where the number of free electrons travelling through the junction increases exponentially. At this point, the current through the junction starts to rise exponentially and the voltage of the junction stabilizes at the Zener voltage – the breakdown voltage of the device at which it will continuously pass current, regardless of the applied voltage. Therefore, a Zener diode prevents excessive current transfer into sensitive components of a circuit by transferring a voltage to a predetermined voltage.
For example, in a voltage-regulator circuit, a Zener diode may be used to limit excess voltage while allowing current to pass through in both directions. When the voltage across the Zener diode is lower than its Zener voltage, the diode remains non-conductive and no current will pass through it. However, when the applied voltage exceeds the diode’s Zener voltage, the diode becomes conductive and will transfer the excess voltage. This ensures that the output voltage will remain constant even if there is a large variation in the input voltage.
MMSZ5222BT1 diodes are commonly used in a variety of applications, ranging from voltage regulation and surge protection to electrostatic discharge (ESD) protection. The device is suitable for automotive, consumer electronics and telecommunications applications, as well as measurement instrumentation. The low Zener voltage in combination with its high reverse voltage and current capacity makes it ideal for such applications. It can be used as a buffer overvoltage protection device, where it absorbs excessive voltage and prevents it from reaching sensitive components, thus ensuring the longevity of the protected circuit. It is also great for ESD protection circuits, as it clamps excessive voltage without suffering breakdown.
In summary, the MMSZ5222BT1 is an example of a single Zener diode (or Z-diodes). It is designed to withstand high reverse voltage and is used for voltage regulation, surge and transient protection, or ESD suppression. It has a Zener voltage of 5.4 volts and a current capacity of 500 mW, making it well suited for applications such as consumer electronics, automotive, telecommunications and measurement instrumentation. Its working principle is based on the avalanche breakdown effect, in which a voltage is transferred to a predetermined voltage when the diode is subjected to excessive current.
The specific data is subject to PDF, and the above content is for reference
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