MMSZ5246B-E3-18 Allicdata Electronics

MMSZ5246B-E3-18 Discrete Semiconductor Products

Allicdata Part #:

MMSZ5246B-E3-18GITR-ND

Manufacturer Part#:

MMSZ5246B-E3-18

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Semiconductor Diodes Division
Short Description: DIODE ZENER 16V 500MW SOD123
More Detail: Zener Diode 16V 500mW ±5% Surface Mount SOD-123
DataSheet: MMSZ5246B-E3-18 datasheetMMSZ5246B-E3-18 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.02539
30000 +: $ 0.02407
50000 +: $ 0.02274
100000 +: $ 0.02054
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
Voltage - Zener (Nom) (Vz): 16V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 17 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 12V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Description

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MMSZ5246B-E3-18 is a single Zener diode, belonging to the family of diodes. This diode is used for efficient management of electric current, and offers high resistance to electric surge and pulsed power, making it an ideal choice for use in many applications. This diode also works exceptionally well in controlling voltage, temperature and other aspects of electric flow.

The MMSZ5246B-E3-18 features a maximum reverse power of 0.5 W, maximum forward voltage of 5 V, and breakdown voltage of 5.6 V. It is able to handle reverse DC current up to 470 μA and reverse voltage up to 6 V. It also has a maximum peak repetitive reverse voltage of 6.2 V. The diode is ideally used in applications that require fast switching, high breakdown voltage and surge current handling.

The application field of the MMSZ5246B-E3-18 diode includes power supplies, motor controllers, low power rectifiers and other electronic applications. It is also often included in electronic control and voltage regulating circuitry. The diode is particularly useful in power system applications requiring a high-capacity and ultra-low voltage diodes.

The working principle of the MMSZ5246B-E3-18 diode is based around the Zener breakdown. This effect, also known as the avalanche effect, is a phenomenon where a diode, or other semi-conductive material, produces a reversed-biased current when placed in an overvoltage condition. As the electric current increases, it reaches a point where the electric field strength across the PN junction is no longer able to support the electrons, and the electrons from the N-type material will be injected into the P-type material, creating an avalanche current.

In the case of the MMSZ5246B-E3-18 diode, the PN junction is designed to allow for a specific voltage to be applied without breakdown. When the applied voltages are within the rated ratings, the diode remains ‘on’ with a low voltage drop. This low voltage drop is called the Zener voltage and is used to regulate the electric current in the circuit. When the applied voltages go beyond the rated ratings, the electric current will reach a point where the electric field strength is no longer able to support the charged electrons, and the Zener breakdown occurs. This avalanche effect then results in a current flow on the diode, allowing for high speed switching and voltage regulation.

The MMSZ5246B-E3-18 diode is an ideal solution for low power rectifier, motor controllers and other electronic applications that require high voltage surge and fast switching. It is available in a variety of package sizes, from 0.6mm to 3.2mm, and it is also available with terminals that offer high-temperature resistance. With a wide range of features, the MMSZ5246B-E3-18 diode can be used in a variety of applications, including power supplies, motor controllers and low power rectifiers.

The specific data is subject to PDF, and the above content is for reference

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