MPLAD36KP85CAE3

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Transient Voltage Suppressors (TVS - Diodes) and their applicable fields and working principles have been widely studied in semiconductor device physics and electronics engineering. MPLAD36KP85CAE3(Mitsubishi semiconductor)is a three-terminal configuration bidirectional transient voltage suppressor diode. It is a surface-mountable, low-inductance and low-capacitance design,and packaged in an SOT666, SOT-26, SC-74, SOT23, and SOT223 form.

Basic Principle of TVS-Diodes.TVS-diodes are a subset of Zeners which can protect sensitive electric circuits from overvoltage transients. TVS-diodes rely on avalanche breakdown to lower their resistance when the voltage rises above a certain level. When the voltage rises above the breakover voltage, the diode increases its current conduction exponentially, absorbing energy from the transient and diverting it to ground.

Application Field of MPLAD36KP85CAE3.MPLAD36KP85CAE3 can be used in a variety of industrial, medical and consumer electronics applications, such as automotive, communication systems, PC boards, telecommunications systems, military defense systems,etc. This diode has a wide operating range, including features like low-voltage clamping response, high surge capability, and low forward voltage drop. It provides excellent protection for power supply, input/output ports, data lines, and other sensitive electronic components against surge voltages, transients, ESD, and EFT.

MPLAD36KP85CAE3 also has excellent reverse standoff voltage for symmetrical and asymmetrical TVS applications. It is suitable for applications needing high peak current capability, continuous avalanche breakdown energy, and fast response time to both positive and negative transients. This diode is also able to offer the widest choice for controlling reverse current paths and signals line protection, especially in applications with limited space availability.

Working Principle of MPLAD36KP85CAE3.MPLAD36KP85CAE3 is characterized by a low breakdown voltage and high power handling capacity. This diode is designed for superior performance in power supply circuits, particularly those with high voltage differential. It provides higher peak pulse power capability than other designs, due to its optimized geometry and larger active area.

The operating principle of MPLAD36KP85CAE3 involves the breakdown of an internalGuard Ring PN junction. When the voltage exceeds the specified breakdown voltage, the ring breaks down, allowing a surge of current to pass through the diode between the anode and cathode terminals. This surplus current is then dissipated to ground on the other side of the diode for protection against over-voltage transients. With its fast response time, low reverse leakage current, and high surge capability, MPLAD36KP85CAE3 ensures that the sensitive elements of a system are maintained within the correct operating parameters.

In conclusion, MPLAD36KP85CAE3 has numerous advantages such as cost-effectiveness, reliability, and design flexibility. It is suitable for a wide variety of TVS applications, and is capable of withstanding high surge voltages. It offers protection against ESD, EFT, and transients while also providing low capacitance and fast response times.

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