MPLAD6.5KP51A

Voltage - Clamping (Max) @ Ipp:	82.4V
Supplier Device Package:	PLAD
Package / Case:	Nonstandard SMD
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	6500W (6.5kW)
Current - Peak Pulse (10/1000µs):	78.8A
Series:	--
Voltage - Breakdown (Min):	56.7V
Voltage - Reverse Standoff (Typ):	51V
Unidirectional Channels:	1
Type:	Zener
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Bulk

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The TVS-Diodes is a translational voltage, which is a semiconductor type that has become popular in many application fields including automotive, computers, communications, and appliances. The TVS-Diodes are usually used in applications that require low forward voltage and capacitive elements for electric current control and protection. The MPLAD6.5KP51A is one of the most popular variants of TVS-Diodes. In this article, we will explore its application field and working principle.The MPLAD6.5KP51A has a triggering temperature ranging from -60 C to +85 C and a maximum breakdown voltage of 5.2 V. It also offers superior ESD protection up to 3500 V and fast recovery times. This makes it suitable for automotive applications where high-speed operation is required. It is also capable of handling up to 17 A of forward surge current at 55 C.The MPLAD6.5KP51A has a wide range of applications. It can be used for protection from Electrostatic Discharge (ESD) damage in automotive infotainment systems, computer peripherals, and other connected devices. It is also suitable for overvoltage and undervoltage protection, surge filter, and line transient protection. The TVS-Diodes are also used for current limiting, active line protection, and improved noise immunity.The working principle of the MPLAD6.5KP51A is based on the process of Avalanche multiplication. When a breakdown voltage is exceeded, the p–n junction diode is in a forward biased state and electrons generated by the thermal generation process start to multiply rapidly by collecting energy from the electric field. This current multiplication process creates a large number of electrons and the resulting high current starts to flow in the diode. This creates a high transient voltage spike at the output, which is counteracted by the TVS-diode.When the transient voltage spike reaches its peak, the avalanche multiplication diode starts to conduct again and the energy stored in the junction is released as a current surge. This current surge is now directed to ground and safely dissipated, thus protecting the circuit from the damaging voltage spikes.In summary, the MPLAD6.5KP51A variant of the TVS-Diodes is an effective and reliable solution for electric current control and protection. It is widely used in automotive, computers, communicatings and other applications owing to its wide triggering temperature range and high surge current handling capability. The working principle of the TVS-Diodes is based on the Avalanche multiplication process which helps to protect the circuit from damaging voltage spikes.

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