MPQ6002 Allicdata Electronics
Allicdata Part #:

MPQ6002-ND

Manufacturer Part#:

MPQ6002

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Central Semiconductor Corp
Short Description: TRANS 2NPN/2PNP 30V 0.5A
More Detail: Bipolar (BJT) Transistor Array 2 NPN, 2 PNP 30V 50...
DataSheet: MPQ6002 datasheetMPQ6002 Datasheet/PDF
Quantity: 84
Stock 84Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Active
Transistor Type: 2 NPN, 2 PNP
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 30mA, 300mA
Current - Collector Cutoff (Max): 30nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 10V
Power - Max: 650mW
Frequency - Transition: 200MHz
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Supplier Device Package: TO-116
Description

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The MPQ6002 from NPN Bipolar Transistor Arrays is a family of high voltage and high current Darlington arrays. It is intended for general-purpose switching and amplifier applications in various electronic devices, such as digital cameras, printers, cable boxes, and automotive infotainment systems. This device consists of two NPN Darlingtons connected in parallel and has two integrated base resistors that enhance the up-flow bias current. This device provides both current gain and voltage gain to the user, thus allowing for simple and efficient operation.

The MPQ6002 features high voltage and high current capabilities, with collector-emitter voltage ratings up to 500V and collector-emitter saturation currents ranging up to 4A. It also has a low junction-to-case thermal resistance of 0.45°C/W, providing improved thermal performance. This device is offered in an SO-8 package, making it suitable for applications in tight spaces, and it is available in both plastic and ceramic versions.

The working principle of the MPQ6002 is quite simple. The collector of one transistor is connected to the emitter of the other transistor so that current flows through both transistors when their bases are activated. This connection between two transistors is called a Darlington pair, and it provides higher current gain than a single transistor. When the base current to the pair is increased, the collector-emitter voltage decreases, allowing for efficient power switching. The two integrated base resistors allow for improved up-flow bias current, thus increasing the device’s current gain and enhancing its performance. Additionally, the two base resistors allow for improved thermal performance.

The MPQ6002 provides a versatile, cost-effective solution for power switching and amplification applications in various electronic devices. Its high voltage and high current capabilities make it suitable for demanding applications, while its SO-8 package provides a simple and efficient solution for space-constrained applications. Additionally, the integrated base resistors provide improved up-flow bias current and improved thermal performance, making the MPQ6002 an ideal choice for any application requiring efficient power switching and amplification.

The specific data is subject to PDF, and the above content is for reference

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