Allicdata Part #: | MPQ7093-ND |
Manufacturer Part#: |
MPQ7093 |
Price: | $ 3.57 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Central Semiconductor Corp |
Short Description: | TRANS 4PNP 250V 0.5A |
More Detail: | Bipolar (BJT) Transistor Array 4 PNP (Quad) 250V 5... |
DataSheet: | MPQ7093 Datasheet/PDF |
Quantity: | 240 |
1 +: | $ 3.24450 |
10 +: | $ 2.89422 |
25 +: | $ 2.60467 |
100 +: | $ 2.37315 |
250 +: | $ 2.14159 |
500 +: | $ 1.92166 |
1000 +: | $ 1.62067 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Transistor Type: | 4 PNP (Quad) |
Current - Collector (Ic) (Max): | 500mA |
Voltage - Collector Emitter Breakdown (Max): | 250V |
Vce Saturation (Max) @ Ib, Ic: | 500mV @ 2mA, 20mA |
Current - Collector Cutoff (Max): | 250nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 25 @ 30mA, 10V |
Power - Max: | 750mW |
Frequency - Transition: | 50MHz |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 14-DIP (0.300", 7.62mm) |
Supplier Device Package: | TO-116 |
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The MPQ7093 is a specially designed transistor array of the bipolar junction transistor (BJT) type that can be used for a variety of applications including amplifying, switching and regulating current in various electronic circuits. In this article, we examine the application field of the MPQ7093 and its working principle.
The MPQ7093 is a three-pin array of transistors designed and optimized for use in power applications where efficiency, economy, and performance are essential. The array is especially suitable for infrequent switching and drive applications, such as relays, Solenoid, small motors, and actuators. Its high degree of integration and low on-resistance allows it to be used in a wide range of power control applications.
The small size of the MPQ7093 allows it to be used in tight fits where size and space considerations are a major factor. It is also one of the few components capable of handling large currents, making it a good choice for high power applications. In addition to its versatile power handling capabilities, the MPQ7093 also features thermal protection to protect the device from overheating and damage caused by extended operating temperatures.
The MPQ7093 features a wide range of features to provide efficient and reliable operation in a wide range of applications. It has a high-voltage base-emitter breakdown voltage of 500V , which is higher than many other products in the same market segments. It also features an integrated reverse diode which increases the overall efficiency of the device by providing fast turn-off and low on-resistance when the device is working in high-current applications.
In addition to its efficient power handling capabilities, the MPQ7093 also features high current gain, which makes the device suitable for use in various amplifier applications. The device features an internal voltage divider which allows for a wide range of operating voltages, reducing the need for external components.
The MPQ7093 is capable of operating at temperatures up to 250°C, making it particularly suitable for use in high-temperature applications. It also features a variety of safety features, such as short-circuit protection, overvoltage protection, and Thermal Runaway prevention.
The working principle of the MPQ7093 is relatively simple. In its most basic form, the MPQ7093 is an arrangement of three NPN transistors connected in series. Each transistor is equipped with a base, an emitter, and a collector. When voltage is applied to the base of the first transistor, a current is created which causes the second transistor to turn on and the third to turn off. This creates a current flow between the emitter and the collector of the third transistor and voltage is produced between the base and the collector of the first transistor. This current flow forms the basic working principle of the MPQ7093.
In summary, the MPQ7093 is a versatile transistor array of the bipolar junction type which can be used for a variety of power control applications. Its small size and low on-resistance allow it to be used in tight fits where space is a major limitation. The device features high voltage base-emitter breakdown voltage and has an integrated reverse diode for efficient power handling capabilities. It is also capable of operating at temperatures up to 250°C, making it suitable for use in high-temperature applications, and features a variety of safety features, such as short-circuit protection and thermal runaway prevention. Its working principle involves an arrangement of three NPN transistors connected in series which produce a voltage between the base and the collector of the first transistor when voltage is applied to the base of the first transistor.
The specific data is subject to PDF, and the above content is for reference
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