MPS4124RLRAG Discrete Semiconductor Products

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The MPS4124RLRAG is a single bipolar junction transistor (BJT) that can be used in a variety of applications. It is a NPN device, with a breakdown voltage of -60V and a typical current gain of around 800 at an operating frequency of 0.1GHz.

The MPS4124RLRAG is designed for use in small-signal amplifier and switching applications. It can be used to boost the voltage levels of small signals, driving current through low-impedance loads, such as those found in audio applications. It is also an ideal choice for switching tasks, as it has a low on-state resistance and high frequency performance.

In addition, the MPS4124RLRAG can be used in high-frequency circuits, such as high-end consumer electronics and cell phone applications. It is suitable for use in circuits where large current spikes can occur and where stability must be maintained.

The MPS4124RLRAG has two terminals, an emitter and a collector. When a small current is passed through the emitter, a larger current is then able to flow from the collector to the emitter. This effect is known as “current gain”. The value of the current gain is determined by the ratio of the emitter current to the collector current.

When the MPS4124RLRAG is used in amplifier applications, the current gain is used to amplify the input signal. The output from the amplifier is then fed back to the input, thus providing feedback and creating a gain greater than one. This created a positive feedback system, which is often used to stabilize and amplify weak signals.

When the MPS4124RLRAG is used for switching applications, the bias voltage applied to the base of the transistor creates a voltage drop across the collector and emitter terminals. This voltage drop determines the level of current that can flow through the transistor. By turning the bias voltage up or down, the level of current can be adjusted.

In summary, the MPS4124RLRAG is a single bipolar junction transistor (BJT) suitable for use in small-signal amplifier applications and high-frequency switching applications. Its main features include a breakdown voltage of -60V, typical current gain of around 800 at 0.1GHz, low on-state resistance, and high-frequency performance. Its two terminals are the emitter and collector, and a current gain can be achieved by passing a small current through the emitter and a larger one from the collector to the emitter.

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