Allicdata Part #: | MPS918GOS-ND |
Manufacturer Part#: |
MPS918G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 15V 0.05A TO92 |
More Detail: | Bipolar (BJT) Transistor NPN 15V 50mA 600MHz 350mW... |
DataSheet: | MPS918G Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 15V |
Vce Saturation (Max) @ Ib, Ic: | 400mV @ 1mA, 10mA |
Current - Collector Cutoff (Max): | 10nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 20 @ 8mA, 10V |
Power - Max: | 350mW |
Frequency - Transition: | 600MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
Supplier Device Package: | TO-92-3 |
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MPS918G is a general-purpose, medium voltage, low-power, surface mount n-channel enhancement mode vertical D-MOSFET transistor. Built using advanced manufacturing processes on an isolated DMOSER substrate,the small MPS918G is an ideal solution for various high voltage and/or high frequency applications such as power management, motor control, audio/video, and switching applications requiring low gate charge and low on resistance.
The MPS918G belongs to the Single Bipolar Transistor family which uses the bipolar junction transistor (BJT) the most common type to switch and amplify currents. This type of transistor is made of two different materials. Depending on the polarities of the materials, a BJT could be PNP or NPN. In a single bipolar transistor, the collector compound is made of silicon and the emitter compound is made of a heavier atom like arsenic or phosphorus.
In order to understand the MPS918G\'s application field and working principle, it helps to understand the operation of the single bipolar transistor first. A single bipolar transistor consists of an emitter and a base. The emitter has three functions: it produces and controls the current, the injection of charges and the majority carriers. The base has two main functions: controlling the emitter current and regulating the current flow between the collector and emitter. The collector receives the majority carriers and provides the output current.
The working principle of the MPS918G is very simple. It has three terminals: source, gate, and drain. The source terminal is connected to a power supply, the gate terminal is used to control the device, and the drain terminal is connected to the load. When the gate voltage is greater than the source voltage, the channel is switched on. This causes a current (drain-source current) to flow through the device from the source to the drain. When the gate voltage is less than the source voltage, the channel is switched off and the drain-source current stops flowing.
The MPS918G is a great choice for high-voltage and/or high-frequency applications. Its ability to switch on and off with a relatively low gate charge makes it a great solution for power management, audio/video, and motor control applications. Additionally, its small size and isolated DMOSER substrate reduces power leakage and helps protect against damage from high voltages.
Overall, the MPS918G is a great transistor solution for a variety of high voltage and/or high frequency applications. Its features and design make it an ideal choice for any application that requires low gate charge and low on resistance. With its small size, low power consumption and ability to withstand high voltages, the MPS918G is an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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