MR20H40CDFR Allicdata Electronics
Allicdata Part #:

MR20H40CDFR-ND

Manufacturer Part#:

MR20H40CDFR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Everspin Technologies Inc.
Short Description: IC RAM 4M SPI 50MHZ 8DFN
More Detail: MRAM (Magnetoresistive RAM) Memory IC 4Mb (512K x ...
DataSheet: MR20H40CDFR datasheetMR20H40CDFR Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 4Mb (512K x 8)
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN-EP, Small Flag (5x6)
Description

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MR20H40CDFR is a type of semiconductor memory that has become very popular in the modern electronics industry. It is widely used in a variety of applications from automotive to industrial and consumer electronics. This specialized memory is based on a particular type of technology known as “floating gate field effect transistors” (FGFETs).

The overall architecture of the MR20H40CDFR memory is composed of two parts: the memory core and the storage array. The memory core is the component responsible for generating and storing the binary data, while the storage array handles the read and write commands. Data is stored in individual memory cells and can be accessed on demand.

The memory cells within the MR20H40CDFR memory operate on the principle of charge sharing. An incoming electrical current is shared between two capacitors and is regulated by the state of the memory cell. A basic memory cell consists of two transistor segments, one of which controls the current flow from the capacitor and the other regulates its discharge. When the memory cell is charged, the transistor segment that manages the current flows from the capacitor is closed, preventing the charge from being discharged. When the memory cell is not charged, the opposite is true, allowing the capacitor to discharge.

In terms of its application fields, the MR20H40CDFR is commonly used for system software code storage, nonvolatile memory storage and storage of large data sets such as those required for video and audio content. Due to its nonvolatile design, it is well suited for applications where the data needs to be retained in the event of power failure. It is also ideal for security purposes due to its fast read and write speeds, as well as its error correction capability.

The major benefit of using the MR20H40CDFR is its high density and small size. This makes it particularly well suited for embedded applications where space and power are major considerations. Its low power consumption also means that it is an ideal choice for battery powered devices. Furthermore, the use of FGFETs means that its thermal performance is significantly improved, allowing it to be used in a wide range of temperatures.

In summary, the MR20H40CDFR is a widely used type of memory designed for a variety of applications. Its small size and low power consumption make it an attractive choice for embedded applications, while its fast speed and error correction make it ideal for high security applications. Finally, its charge sharing principle as well as its improved thermal performance make it a reliable, cost-effective choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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