MR20H40DF Allicdata Electronics
Allicdata Part #:

MR20H40DF-ND

Manufacturer Part#:

MR20H40DF

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Everspin Technologies Inc.
Short Description: IC RAM 4M SPI 50MHZ 8DFN
More Detail: MRAM (Magnetoresistive RAM) Memory IC 4Mb (512K x ...
DataSheet: MR20H40DF datasheetMR20H40DF Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 4Mb (512K x 8)
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: --
Memory Interface: SPI
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN-EP, Small Flag (5x6)
Description

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Memory is widely used in all kinds of applications, such as computer systems and byte-oriented processor systems. Among these memory products, MR20H40DF can be widely adopted. This article will introduce the application field and working principle of MR20H40DF.

Application Field of MR20H40DF

MR20H40DF, as a single-cell ROM embedded non-volatile memory, can store 40 bits of information in one single cell, and it is widely used in CPU like 805x, 88Exx, and 286. This type of memory has a great compatibility, which makes it very flexible for many kinds of applications. Its high integration and low power consumption, makes it suitable for all kinds of systems, such as portable electronic devices, monitors, printers, and communication devices. In addition, the low power consumption also reduces the device\'s heat power and extends the time of operation.

Working Principle of MR20H40DF

The MR20H40DF is an innovative non-volatile single-cell ROM with a word length of 40 bits. It is based on the concept of the power-down memory bank, which is specifically designed to store certain information when the power is off. The memory cell of the MR20H40DF can store 40 bits of data in one single cell. Moreover, it has a built-in synchronous DATA DESCRIPTOR that enables data busy status monitoring and makes multiple-device access more efficient.

In operation, the MR20H40DF reads and writes data with a single read/write cycle. The data can be accessed by either serial or parallel cycles. The serial cycle provides access to multiple data bits simultaneously, while the parallel cycle is advantageous when the data is continually updated. The data is stored in a static random access memory (SRAM) and is transferred at high speed between the MR20H40DF and the static RAM.

The MR20H40DF\'s built-in timing circuit allows for a cycle time of 7.2 nanoseconds. This low cycle time enables the device to be used in high speed systems. The device is also highly reliable, as it is manufactured on a 0.35um process, with high integration and good environmental protection.

Conclusion

The MR20H40DF is an integrated, nonvolatile single-cell ROM with high integration and low power consumption, suitable for use in a wide range of applications such as portable electronic devices, monitors, printers, and communication devices. It has a word length of 40 bits and supports both serial and parallel access with a cycle time of 7.2 nanoseconds, making it an ideal choice for high performance systems. Its low power consumption and high reliability also makes it a good choice for use in a wide range of systems.

The specific data is subject to PDF, and the above content is for reference

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