Allicdata Part #: | MS1579-ND |
Manufacturer Part#: |
MS1579 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | TRANS RF BIPO 65W 5.2A M156 |
More Detail: | RF Transistor NPN 25V 5.2A 470MHz ~ 860MHz 65W Cha... |
DataSheet: | MS1579 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Specifications
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 25V |
Frequency - Transition: | 470MHz ~ 860MHz |
Noise Figure (dB Typ @ f): | -- |
Gain: | 8.5dB |
Power - Max: | 65W |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 10 @ 500mA, 20V |
Current - Collector (Ic) (Max): | 5.2A |
Operating Temperature: | 200°C (TJ) |
Mounting Type: | Chassis Mount |
Package / Case: | M156 |
Supplier Device Package: | M156 |
Description
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The MS1579 is a bipolar junction transistor (BJT) designed for radio frequency (RF) applications. It is commonly used in amplifiers, oscillators, and other RF circuits. This RF BJT is designed for operation in the 500 MHz to 2.5 GHz range. It is designed for push-pull applications and provides excellent input/output linearity and high power gain. It has a gain bandwidth product of 200 MHz and can provide a peak power output of up to 75 Watts. The MS1579 is a NPN transistor with a P channel output. It has an input impedance of 50Ω, an output impedance of 100Ω, and an operating voltage range of 3.0-6.0V. The device features a thermal resistance of 55°C/W and a maximum operating temperature of 175°C. The transistor is constructed using a two-layer dielectric structure which helps reduce operating temperature and improve performance. The dielectric has a low thermal conductivity and helps reduce EMF interference. In order to ensure that the device operates reliably, it must be properly matched against the circuit load. This can be done using a load line measurement. This measurement is used to ensure that the load line of the device matches the left side of the transistor when it is switched off and the right side of the transistor when it is switched on. The MS1579 has a high power gain and excellent linearity, making it an ideal device for use in RF circuits. It is also thermally and EMF resistant, making it well suited for high temperature applications. With its wide bandwidth, low noise, and high power output, the MS1579 is an excellent choice for a wide range of RF applications.
The specific data is subject to PDF, and the above content is for reference
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