MS2244 Allicdata Electronics
Allicdata Part #:

MS2244-ND

Manufacturer Part#:

MS2244

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: RF POWER TRANSISTOR
More Detail: RF Transistor
DataSheet: MS2244 datasheetMS2244 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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MS2244 Application Field and Working Principle

MS2244 is a high-frequency, RF, NPN bipolar junction transistor designed for use in a variety of electronic applications. It is an excellent choice for power amplifiers, audio amplifiers, low-frequency oscillators, modulators, and many other applications. The MS2244 has a maximum power rating of 200 mW and a maximum temperature range of -55 to 150 °C. It is also designed to have low phase noise and minimal distortion.

The MS2244 has a maximum collector-emitter voltage (Vce) of 30V and an operating junction temperature range of -55 to 150°C. It has a typical noise figure of 3.9 dB and a maximum collector-base voltage of 40V. This device is a low voltage, low current transistor, with an input impedance of 30 ohms. It has a breakdown voltage of 40V and a collector current of 40 mA.

The MS2244 also has an integrated protection circuit that is designed to reduce the risk of damage due to external voltage spikes. The protection circuit is designed to reduce the amount of power that can be applied to the transistor during a voltage spike. This helps to protect the device from overheating and damage.

The MS2244 is designed to be used for a wide range of RF applications. This includes RF amplifiers, RF low-noise amplifiers, RF oscillators, RF modulators, RF modulation systems, RF transmitters, RF receivers, and RF power amplifiers. It can also be used for audio amplifiers, low frequency oscillators, and power amplifiers.

The operating principle of the MS2244 is based on a bipolar junction transistor, also known as a BJT, which consists of three junctions between two layers of doped semiconductor, a base and a collector. The base and collector are connected by a small base layer that is created by a current flowing through the base. This base layer allows electrons to flow from the collector to the base and vice versa, thus creating a current flow between the two junctions.

The MS2244 is designed to be used in circuits that require high frequency applications. It can also be used in high performance applications, such as RF and audio amplifiers. The device is also capable of high frequency and temperature stability, as well as high efficiency and low noise. In addition, the device has a low collector-emitter saturation voltage and a low gate capacitance, which helps to increase the switching speed of the device.

The MS2244 is an excellent choice for a variety of electronic applications and is available in both surface-mount and through-hole packages. It is a reliable device that can provide excellent performance in a variety of applications. The device is also affordable and easy to find. If you are looking for a high performance, highly reliable transistor, then the MS2244 is an excellent choice.

The specific data is subject to PDF, and the above content is for reference

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