MS2554 Allicdata Electronics
Allicdata Part #:

MS2554-ND

Manufacturer Part#:

MS2554

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: TRANS RF BIPO 600W 17.8A SO42
More Detail: RF Transistor NPN 65V 17.8A 1.025GHz ~ 1.15GHz 600...
DataSheet: MS2554 datasheetMS2554 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 65V
Frequency - Transition: 1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f): --
Gain: 6.2dB
Power - Max: 600W
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
Current - Collector (Ic) (Max): 17.8A
Operating Temperature: 200°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M218
Supplier Device Package: M218
Description

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The MS2554 is a UHF RF bipolar junction transistor (BJT) used in many radio frequency applications that operate in the range of around 400MHz to 500Mhz. This transistor is designed to offer high gain, high efficiency, and low noise performance. It features an internal base-collector resistor on its die that results in stable gain over temperature and frequency. The MS2554 is suitable for applications in receiver front ends, power amplifiers, and low-noise amplifiers (LNAs).

When designing a circuit around the MS2554, one of the most important considerations is the implementation of input and output matching networks that ensure maximum power efficiency and linearity. These input and output match networks also help to reduce the noise figure as well as higher order harmonics, improving overall booster performance. The overall efficiency of the amplifier circuit should be in the range of 70-80%, depending on the input and output match networks.

The main working principle behind the MS 2554 is passivation isolation. This process involves covering the transistor’s emitter and collector regions in a special passivating oxide layer. During passivation, this oxide layer prevents current from flowing in the base-collector junction and collector-emitter junction of the BJT, leaving only the base-emitter junction as the active region. This results in higher efficiency, lower voltage drop and improved linearity of the device.

The MS2554 has a breakdown voltage of around 28 volts, a typical dc current gain of 100, and an operating current of around 0.2mA. The maximum gain of the transistor lies in the range of around 15dB at 500MHz, and a maximum temperature operating range of -55 to +150 degrees Celsius. The device is suitable for a wide range of applications depending on its implementation, including telemetry broadcasting, land vehicle communications, marine communications, UHF personal communications systems, and satellite communication links. This transistor also has high resistance against input blocking frequencies, as well as a broad range of gain and output power.

The MS2554 has become a popular choice for many engineers due to its ability to provide so many advantages in a small transistor package. It is an ideal choice for UHF applications, offering high gain, high efficiency, and low noise performance. With proper design, the overall efficiency of the amplifier circuit can be improved by using matching networks at the input and output. The MS2554 offers wide temperature range and breakdown voltage, as well as low current gain, making it an excellent choice for moderate to high power-level designs.

The specific data is subject to PDF, and the above content is for reference

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