MS2575A Allicdata Electronics
Allicdata Part #:

MS2575A-ND

Manufacturer Part#:

MS2575A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: RF POWER TRANSISTOR
More Detail: RF Transistor
DataSheet: MS2575A datasheetMS2575A Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Part Status: Obsolete
Description

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Transistors play a vital role in controlling and managing the flow of electrical current. A transistor is a semiconductor device that can amplify or switch electrical signals and is used in many electronic circuits. The MS2575A is a family of NPN Bi-polar Junction Transistors (BJT) used for RF signal management applications.

The MS2575A is a type of large signal NPN transistor designed for Radio Frequency (RF) signal management applications. It has an operating frequency range from 5 MHz to 500 MHz and is made using the latest high-density silicon bipolar technology. It has a maximum power output of around 5W, making it ideal for higher power applications. It has an excellent dynamic range and low noise figure, making it suitable for high-frequency applications.

The MS2575A is available in several packages, including an SO-8 pad, an SOT-23 pad, and an SOT-323 pad. This allows the user to tailor the package to the intended application. It has a low capacitance and low forward voltage drop, making it suitable for high-frequency switching and modulation of signals.

One of the main advantages of the MS2575A is its high gain and wide dynamic range, making it ideal for RF signal amplification applications. Its high gain and low noise figure make it suitable for use in noisy environments. It is also particularly suitable for applications such as frequency shift keying, pulse modulation and spread spectrum applications. The MS2575A also has excellent power gain, making it suitable for use in power amplifiers.

The MS2575A works by using the base to control the amount of current that flows between the collector and the emitter. It is an NPN transistor, which means that when a positive voltage is applied to the base, current will flow from the collector to the emitter. The current flow is then controlled by the amount of voltage applied to the base. The larger the voltage applied to the base, the greater the current that will flow between the collector and the emitter.

The MS2575A is ideal for high-frequency applications due to its low capacitance, wide dynamic range and low forward voltage drop. This makes it suitable for use in radio frequency signal management applications, such as in frequency shift keying, pulse modulation and spread spectrum applications. The MS2575A is a reliable, high-performance transistor and is a great choice for RF signal management applications.

The specific data is subject to PDF, and the above content is for reference

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