| Allicdata Part #: | MS2554A-ND |
| Manufacturer Part#: |
MS2554A |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | RF POWER TRANSISTOR |
| More Detail: | RF Transistor NPN 65V 17.8A 1.025GHz ~ 1.15GHz 600... |
| DataSheet: | MS2554A Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Series: | -- |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 65V |
| Frequency - Transition: | 1.025GHz ~ 1.15GHz |
| Noise Figure (dB Typ @ f): | -- |
| Gain: | 6.2dB |
| Power - Max: | 600W |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 15 @ 1A, 5V |
| Current - Collector (Ic) (Max): | 17.8A |
| Operating Temperature: | 200°C |
| Mounting Type: | Chassis Mount |
| Package / Case: | M216 |
| Supplier Device Package: | M216 |
Description
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MS2554A application field and working principleThe MS2554A is a Bipolar Junction Transistor (BJT) used in Radio Frequency (RF) applications. It is a high-power transistor capable of operating over a wide range of frequencies, from DC to 12GHz. The MS2554A is typically used in RF communication systems, such as cellular base stations and mobile handsets, as well as in satellite, radar, and other High-Frequency (HF) applications.The MS2554A is a NPN bipolar junction transistor with an integrated resistor for efficient heat dissipation. It has two gain parameters, the Small-Signal Gain (S) and the Noise Figure (NF), which can be adjusted to desired levels by changing the resistor value. The transistor also features a high current capacity and low noise figure, making it ideal for high-power applications.The MS2554A can be used in a variety of applications, such as high-power transceivers and amplifiers, transmitters, switching circuits, and low-noise oscillators. It is also suitable for low-noise amplifiers and low distortion linear amplifiers.The MS2554A is composed of three terminals: the emitter, base, and collector. The emitter and collector terminals are connected to the output stage of the transistor, while the base terminal is used to adjust the gain and noise figure. As current flows through the emitter and collector terminals, it produces an amplified output signal at the collector.The MS2554A typically operates in the range of DC to 12GHz. It has a high Gain-Bandwidth Product (GWP) and low Noise Figure (NF) and is capable of providing up to 30 dB gain at 13.2 GHz. The maximum output power at 13.2 GHz is 5.5 Watts.The MS2554A has a wide range of applications, from commercial to military. It can be used in high-power transceivers, amplifiers, transmitters, switching circuits, low-noise oscillators, low-noise amplifiers, and low distortion linear amplifiers. It is also suitable for HF, satellite, and radar systems.In conclusion, the MS2554A is a high-performance Bipolar Junction Transistor (BJT) suitable for RF applications. It has an integrated resistor for efficient heat dissipation, a high Gain-Bandwidth Product (GWP), and low Noise Figure (NF). It is capable of providing up to 30 dB gain at 13.2 GHz and a maximum output power at 13.2 GHz is 5.5 Watts. The MS2554A can be used in high-power transceivers, amplifiers, transmitters, switching circuits, low-noise oscillators, low-noise amplifiers, and low distortion linear amplifiers.
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MS2554A Datasheet/PDF