| Allicdata Part #: | MSC72111H-ND |
| Manufacturer Part#: |
MSC72111H |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | RF POWER TRANSISTOR |
| More Detail: | RF Transistor |
| DataSheet: | MSC72111H Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Part Status: | Obsolete |
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The MSC72111H is a special type of Bipolar Junction Transistor (BJT) used in radio frequency (RF) applications. It has several unique characteristics that make it well-suited for such applications.
For starters, the MSC72111H is a low-noise transistor. This means that it produces less noise than a normal BJT in the same frequency range, and this noise level can be controlled by adjusting the quiescent current. This enables engineers to design circuits that are more sensitive to weak signals, as well as circuits that are better at rejecting interference caused by nearby sources. Additionally, the low noise also helps reduce any distortion caused by the transistor, which is important for applications such as communication.
Another feature of the MSC72111H is its high input impedance. This is because it has a higher Power Gain Bandwidth Product (PGBP) compared to other BJTs. The PGBP is an important parameter for RF applications because it represents the bandwidth where the transistor can operate significantly more efficiently with respect to power gain. This high PGBP, in combination with the low noise, makes the MSC72111H an ideal transistor for high-frequency circuits.
Finally, the MSC72111H has a relatively high cutoff frequency – fT - when compared to other BJTs. This is due to the fact that its switching speed is fast; allowing it to handle digital signals with greater accuracy. In addition, the fT also helps to reduce any distortion caused by the transistor, which is important for communication applications.
The working principle of the MSC72111H is no different than that of any other BJT. It is a three-terminal device that acts as an amplifier or switch in a circuit. The voltage applied to the base terminal controls the current flowing between the collector and the emitter, and this current can be used to control other elements in the circuit. This is the main principle behind most RF circuits, and the MSC72111H is used to effectively amplify signals in this type of circuit.
In summary, the MSC72111H is an advanced Bipolar Junction Transistor (BJT) designed for use in radio frequency (RF) applications. Its low noise and high input impedance, combined with its fast switching speed, make it ideal for this type of utilization. Furthermore, its working principle is no different than that of any other BJT, making it easy to incorporate into existing circuits. For this reason, the MSC72111H is increasingly being used in a variety of RF applications and continues to be a popular choice for engineers.
The specific data is subject to PDF, and the above content is for reference
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MSC72111H Datasheet/PDF