
Allicdata Part #: | 1086-7894-ND |
Manufacturer Part#: |
MSMBG2K5.0E3 |
Price: | $ 0.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 5V 7.6V DO215AA |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | 0.00000 |
Voltage - Clamping (Max) @ Ipp: | 7.6V |
Supplier Device Package: | SMBG (DO-215AA) |
Package / Case: | DO-215AA, SMB Gull Wing |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 2000W (2kW) |
Current - Peak Pulse (10/1000µs): | 10A (8/20µs) |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 5.9V |
Voltage - Reverse Standoff (Typ): | 5V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Obsolete |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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MSMBG2K5.0E3 belongs to TVS - Diodes, and is used in various applications, providing protection against electrical transients. It is designed for applications with a peak pulse power in excess of 2000 watts and a surge current of 16 amps. It has a low capacitance (1.2pF) and fast response time, making it ideal for applications that require high levels of protection.
The key parameters of the MSMBG2K5.0E3 include 5.0V reverse stand-off voltage, 16A max. surge current (8/20us), 1.2pF capacitance, <20nS reverse recovery time, 8KV ESD (HBM), and 1.05W max. power dissipation. These features make this diode suitable for use in data lines, TVS/ESD diode arrays, and high speed transmission lines.
The working principle of the MSMBG2K5.0E3 is based on its design as a Transient Voltage Suppressor (TVS) Diode. It is designed to protect against transient spikes and to limit the voltage that can pass from one point to another. It does this by clamping the voltage at a certain level so that the transient spike is stopped before it reaches the system.
The MSMBG2K5.0E3 uses a special avalanche breakdown process which helps to ensure a faster response time than other TVS diodes, allowing for a faster and more reliable level of protection against transients. Avalanche breakdown occurs when the voltage surpasses the breakdown voltage of the diode, causing a high current to flow across the diode in a very short period of time. The resulting energy can temporarily reduce the resistance of the diode, dissipating the transient before it can cause any damage to the system.
In addition, the MSMBG2K5.0E3 has a low clamping voltage of 8V, and a low capacitance of 1.2pF. This helps to reduce the effects of ringing, which can cause EMI and EMF interference to nearby devices and interfere with the proper performance of the system.
The MSMBG2K5.0E3 can be used in a wide variety of applications, including computing, telecommunications, industrial, automotive, and medical applications. Its fast response time and low capacitance make it ideal for use in high-speed transmission lines, while its flexibility makes it suitable for use in data lines and diode arrays. Additionally, it is also suitable for PCBs, cables, and connectors, making it an ideal choice for protecting sensitive electronic components from transients.
The specific data is subject to PDF, and the above content is for reference
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MSMBJ33CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
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MSMBG54A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 54V 87.1V DO215... |
MSMBG90A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 90V 146V DO215A... |
MSMBG58CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 58V 93.6V DO215... |
MSMBJ18CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
MSMBJ20A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
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