| Allicdata Part #: | MSMBJ33CAE3/TRMS-ND |
| Manufacturer Part#: |
MSMBJ33CAE3/TR |
| Price: | $ 0.92 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS |
| More Detail: | N/A |
| DataSheet: | MSMBJ33CAE3/TR Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| 700 +: | $ 0.84506 |
| Current - Peak Pulse (10/1000µs): | 11.3A |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Clamping (Max) @ Ipp: | 53.3V |
| Voltage - Breakdown (Min): | 36.7V |
| Voltage - Reverse Standoff (Typ): | 33V |
| Bidirectional Channels: | 1 |
| Moisture Sensitivity Level (MSL): | -- |
| Type: | Zener |
| RoHS Status: | RoHS Compliant |
| Part Status: | Active |
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TVS (Transient Voltage Suppressors) diode is an electronic device used to protect electrical circuits from destructive transient surges in voltage. This type of diode is a highly efficient component that is designed to reduce, block, or limit transverse electrical pulses. One of the most important applications of these diodes is in the protection of sensitive electronic components, such as transistors or integrated circuits, from unpredictable overvoltage. MSMBJ33CAE3/TR is one of such reliable diode products.
MSMBJ33CAE3/TR is designed to protect upstream electronics from destructive transients caused by electro-static discharge (ESD) and lightning. These components are capable of not only withstanding high-level transient voltages up to 330V, but also doing so in a way that does not significantly drop the voltage of the input signal going into or out of the protected device. The bidirectional blocking voltage of this device is exclusive in the industry, and this means that it can work in both directions, without causing a voltage drop in either direction. Furthermore, it can withstand repetitive transient pulses without damage.
In terms of electrical characteristics, the MSMBJ33CAE3/TR diode has a current rating of 0.3A for avalanche breakdown and 0.1A for ESD. It has a reverse leakage current of 1.5nA and a total capacitance of 3.7pF at reverse breakdown. The capacitance value of the diode is important in terms of its ability to sustain a transient surge and limit high-frequency transients.
The actual working principle of this diode involves a combination of Thyristor Forward Voltage Conduction (TFVC) and Avalanche Diode Protection. When the reverse voltage of the MSMBJ33CAE3/TR diode is greater than its peak forward voltage, the device starts to conduct. This is the TFVC mechanism. On the other hand, the Avalanche Diode Protection mechanism works to suppress transient voltages and limit current flow.
When the MSMBJ33CAE3/TR diode is subjected to a transient surge, it can absorb the surge voltage and safetly release the energy in the form of heat. As a result, the device is capable of withstanding repetitive transient pulses without any damage. Furthermore, due to its compact construction and larger junction area, the device can dissipate large transient pulses without failure.
In addition to its robust protection capabilities, the MSMBJ33CAE3/TR diode is also designed to be used in an array of applications. Common uses of the device include TVS protection of automotive electronics, general electronic circuit protection, electro-static discharge protection, and surge suppression. Moreover, due to its small form factor and low thermal resistance, the device can be installed in medical and industrial equipment that requires ruggedness and reliability.
In conclusion, the MSMBJ33CAE3/TR diode is a reliable device that can provide optimal protection from transient voltage surges and is suitable for use in multiple applications. Its superior TFVC and avalanche diode mechanisms facilitate efficient surge protection, and its compact construction and thermal dissipation capabilities make for an efficient and reliable solution.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMBG2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ17AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
| MSMBJ10CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 10V 17V DO214AA |
| MSMBG7.0CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 7V 12V DO215AA |
| MSMBJ58AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMBG110AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 110V 177V DO215... |
| MSMBG28AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMBJ16A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC18 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 18V 28.8V DO214... |
| MSMBJ8.5CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MSMBG11A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 11V 18.2V DO215... |
| MSMBJSAC45 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 45V 77V DO214AA |
| MSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ12A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
| MSMBJ11CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMBJ60CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMBG90CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMBG5.0AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBJ16AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 16V 26V DO214AA |
| MSMBJ170CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 170V 275V DO214... |
| MSMBJ36CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
| MSMBG24CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 24V 38.9V DO215... |
| MSMBJSAC75 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBJ60AE3/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJSAC6.0 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 6V 11.2V DO214A... |
| MSMBJ8.0AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBJ45CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
| MSMBG130A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 130V 209V DO215... |
| MSMBG20CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
| MSMBJ2K4.5E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO214... |
| MSMBJ7.5AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 7.5V 12.9V DO21... |
| MSMBJ8.0A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBG75CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 75V 121V DO215A... |
| MSMBG15AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBG16CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 16V 26V DO215AA |
| MSMBJ33CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJ7.5CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJSAC75E3 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
| MSMBG10CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 10V 17V DO215AA |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MSMBJ33CAE3/TR Datasheet/PDF