MSMBG6.5CAE3 Allicdata Electronics
Allicdata Part #:

1086-7946-ND

Manufacturer Part#:

MSMBG6.5CAE3

Price: $ 0.92
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 6.5V 11.2V DO215AA
More Detail: N/A
DataSheet: MSMBG6.5CAE3 datasheetMSMBG6.5CAE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
725 +: $ 0.83680
Stock 1000Can Ship Immediately
$ 0.92
Specifications
Voltage - Clamping (Max) @ Ipp: 11.2V
Supplier Device Package: SMBG (DO-215AA)
Package / Case: DO-215AA, SMB Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 53.6A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 7.22V
Voltage - Reverse Standoff (Typ): 6.5V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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The MSMBG6.5CAE3 is a transient voltage suppression (TVS) diode. It is a unidirectional semiconductor device used to protect other components from electrical overshoot, transient voltage and reverse polarity voltages. It also provides protection from the effects of Electrostatic Discharge (ESD), surges and electrical overstress.

A TVS diode is typically used in electronic circuits to protect them from voltage spikes, voltage transients and ESD. It is used in various types of electronic equipment such as computers, consumer electronics, industrial automation systems, medical equipment and many more. The MSMBG6.5CAE3 is especially useful for protecting critical components exposed to high transient voltage transients.

The MSMBG6.5CAE3 consists of two p-type electrodes, with a depletion layer in between them. The depletion layer separates the components and helps control the amount of current that flows between them. This layer is also known as a varistor, which will help limit the voltage changes due to any ESD occurrence. The large area and low capacitance of the p-type electrodes provide protection against over-voltage, reverse-voltage and transients.

The MSMBG6.5CAE3 is designed to be used in conjunction with other components to form a complete circuit, such as in a power supply, power management ICs or integrated circuits. In addition, this TVS diode can be used as a low-voltage surge suppressor in automotive applications, for added protection against transient voltage spikes and reverse polarity. In some applications, it can also be used as a service-port protector.

When power is applied to the MSMBG6.5CAE3 diode, the depletion layer provides a large capacitance, allowing it to store the excess energy during voltage spikes and transients. The diode also has a low clamping voltage, making it suitable for use in low voltage power-supply circuits. The diode can also be used in combination with other components, such as Zener diodes, varistors or even avalanche diodes, to form an effective protection circuit.

The MSMBG6.5CAE3 can also be used as a voltage reference, by controlling its conductance. This makes it useful as a voltage regulator, to help maintain a constant voltage across various loads. It can also be used to detect spikes or excessive transients, and to trigger a reset or counter-action, if necessary.

In certain applications, the MSMBG6.5CAE3 can provide ESD protection, when connected between a data line and the ground. This will ensure that excessive ESD currents do not enter the circuit. This is especially useful in applications such as smartphones, tablets and other mobile devices.

Overall, the MSMBG6.5CAE3 is an excellent choice for providing surge protection for a wide range of applications. It is also suitable for use in low voltage power-supply circuits and can help reduce the risk of electrostatic discharge. With its low capacitance and large area depletion layer, it can provide effective protection against transients and voltage spikes.

The specific data is subject to PDF, and the above content is for reference

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