
Allicdata Part #: | 1086-8070-ND |
Manufacturer Part#: |
MSMBJ24CAE3 |
Price: | $ 0.76 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 24V 38.9V DO214AA |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
794 +: | $ 0.68981 |
Specifications
Voltage - Clamping (Max) @ Ipp: | 38.9V |
Supplier Device Package: | SMBJ (DO-214AA) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 600W |
Current - Peak Pulse (10/1000µs): | 15.4A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 26.7V |
Voltage - Reverse Standoff (Typ): | 24V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
Description
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The MSMBJ24CAE3 TVS diode is an ultra-low capacitance transient voltage suppressor that offers multilayer suppression and ESD protection for sensitive circuit components. This diode is specially designed for use in high-frequency and high-speed applications with very low capacitance levels, with an effective capacitance that ranges from 0.1pF to 3.3pF depending on the breakdown voltage. MSMBJ24CAE3 is constructed using next-generation high-speed, low-noise silicon technology, providing excellent protection against spikes or transients caused by static discharge, contact with various cable assemblies, or any other connected device.The MSMBJ24CAE3 is a silicon-based diode designed for a wide range of ESD protection. It is designed for protection against both ESD and electrical fast transients with a low clamping voltage with IEC 61000-4-2 compliance. This diode is designed to provide a low clamping voltage for a variety of ESD conditions, including fast versus slow rise time, high versus low working voltage, and AC versus DC applications. This diode includes a wide range of TVS diode features, including a low package inductance, which is important in fast signal applications. It is also designed with a low capacitance value, a high-voltage standoff, and a low forward voltage. The low forward voltage is beneficial in applications where there is a risk of reverse current, as it reduces the leakage current through the diode.The diode is also designed with a low EMI/RFI noise figure, which is further beneficial in electronic systems that are sensitive to pick up any signal noise present in the circuit. The diode has an ultra-low-clamping, which helps to reduce the surge voltage on connected components and systems, reducing the risk of any damage caused by excessive transient voltages. The working principle of the diode involves the voltage differential across the diode triggering an avalanche breakdown event. The voltage at which this occurs is known as the ‘breakdown voltage’ of the diode and is used to determine the required reverse operating voltage of the diode. Once triggered, the diode switches into a low-resistance state, allowing the current to flow through it rather than around it. This action allows the diode to divert the surge energy to ground, preventing it from damaging any connected devices.For applications requiring additional protection or a wider range of protection, additional configurations of diode can be used, such as the Schottky diode or Zener diode designs, which offer different voltage breakdowns and wider ranges of protection.The MSMBJ24CAE3 diode is suitable for use in a variety of applications, including power supplies, personal computers, digital imaging, audio-visual equipment, and many more. This diode can also be used in automotive electrical systems, where it can be used to protect sensitive automotive devices from damage due to surge voltages.
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