MSMBJ6.5CAE3/TR Allicdata Electronics

MSMBJ6.5CAE3/TR Circuit Protection

Allicdata Part #:

MSMBJ6.5CAE3/TRMS-ND

Manufacturer Part#:

MSMBJ6.5CAE3/TR

Price: $ 0.92
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS
More Detail: N/A
DataSheet: MSMBJ6.5CAE3/TR datasheetMSMBJ6.5CAE3/TR Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
700 +: $ 0.84506
Stock 1000Can Ship Immediately
$ 0.92
Specifications
Current - Peak Pulse (10/1000µs): 53.6A
Supplier Device Package: SMBJ (DO-214AA)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 600W
Series: Military, MIL-PRF-19500
Voltage - Clamping (Max) @ Ipp: 11.2V
Voltage - Breakdown (Min): 7.22V
Voltage - Reverse Standoff (Typ): 6.5V
Bidirectional Channels: 1
Moisture Sensitivity Level (MSL): --
Type: Zener
RoHS Status: RoHS Compliant
Part Status: Active
Description

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A TVS diode is a type of voltage protection diode that is used in order to protect electronic components from voltage transients. It is a solid-state diode that clamps the voltage at a predetermined level in order to prevent it from exceeding the rating of the component. The MSMBJ6.5CAE3/TR is an advanced TVS diode designed to provide superior protection in a wide range of applications.

Application Field

The MSMBJ6.5CAE3/TR is well-suited for use in applications such as automotive electronics, industrial electronics, computer systems, mobile devices, and other sensitive electronic components. It is designed to protect against transient overvoltages, ESD, and EFT. It is also ideal for use in both commercial and consumer electronic products.

Working Principle

The MSMBJ6.5CAE3/TR utilizes a unique two-stage integrated circuit protection system. The first stage of the integrated circuit is a TVS diode that absorbs the transient energy. The second stage is a low-capacitance, low-impedance polysilicon diode which filters out high-frequency noise and provides an extremely fast response time. The low-capacitance, low-impedance polysilicon diode also minimizes the connection capacitance and the resulting signal degradation.

The MSMBJ6.5CAE3/TR also utilizes an enhanced zener diode structure to provide the best performance in terms of temperature, reverse stand-off voltage, clamping voltage, and response time. The zener diode structure is designed to provide a high degree of protection even when faced with extreme overvoltages. The combination of the two-stage protection structure and the enhanced zener diode structure enables the MSMBJ6.5CAE3/TR to exhibit superior protection properties.

The MSMBJ6.5CAE3/TR is rated for a maximum transient current of 5A at peak pulse, allowing it to provide superior overvoltage protection in a wide range of applications. It is also designed to be RoHS compliant, making it suitable for use in a variety of end products.

Conclusion

The MSMBJ6.5CAE3/TR is a high-performance TVS diode designed to provide superior protection to a variety of electronic components. It is ideal for use in applications such as automotive electronics, industrial electronics, computer systems, mobile devices, and other sensitive electronic components, where high-quality overvoltage protection is required. The two-stage protection system and enhanced zener diode structure enable the device to provide superior performance in terms of temperature, reverse stand-off voltage, clamping voltage, and response time. The device is also RoHS compliant, making it well-suited for a variety of end products.

The specific data is subject to PDF, and the above content is for reference

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