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TVS - Diodes

TVS (Transient Voltage Suppression) diodes are the devices mainly used to protection against electrical over-stress (EOS) or electrical transients due to the power load line from electrical power systems. A typical TVS diode circuit is shown below.

The TVS diode is essentially a solid-state switch constructed from a P-N junction. When an over-voltage appears at the diode’s cathode, its reverse breakdown voltage is exceeded and a current begins to flow. When the current exceeds a predetermined value, an avalanche breakdown occurs through the P-N junction and the diode “shorts out” by establishing a low resistance path between its cathode and anode.

In most cases, the purpose of the TVS diode is to provide protection against hazardous voltage levels by absorbing and diverting electrical surges to an appropriate safe level. TVS diodes are used in applications such as protecting AC & DC power lines, telephone lines, automotive power systems, data lines, and industrial control systems.

The MSMBJSAC12 application field and working principle of TVS diodes are mainly based on its electrical characteristics. The forward, blocking and reverse characteristics of the diode are primarily used to determine the type, model, and application field of the diode. The maximum forward current, maximum reverse voltage, junction capacitance, maximum peak power, leakage current and tj (junction temperature) value are some of the parameters that are used to determine the appropriate TVS diode for a given application.

The MSMBJSAC12 specifications include the device voltage (VD) as its main performance criteria. The VD is usually specified in the voltage range that is 1.5 to 1500 volts. The peak pulse power dissipation is also specified in Watts. The frequency and temperature of TVS operation is also important for these devices. The working voltage of the diode (VOUT) should be within the given range of VD.

The other working principle of the MSMBJSAC12 is related to the device response time. The response time of the diode is usually given by the time constant. The response time is usually measured at the junction temperature (Tj) and is usually in the range from 0.3µs to 10µs. The TVS diode characteristics of this kind can be improved by the use of improved devices. Improved devices such as high breakdown voltage, low capacitance breakdown diodes, low reverse leakage current, extremely low capacitance breakdown diodes, and low ESR (equivalent series resistance) devices.

In summary, the MSMBJSAC12 application field and working principle of TVS diodes are based on their electrical characteristics and the performance criteria specified in the data sheet. The parameters considered while selecting the appropriate TVS diode for a given application include forward voltage, blocking voltage, reverse voltage, junction capacitance, maximum peak power, leakage current and junction temperature. The response time is usually given by the time constant which is usually in the range from 0.3µs to 10µs. The TVS diode characteristics can be improved by the use of improved devices such as high breakdown voltage, low capacitance breakdown diodes, low reverse leakage current, extremely low capacitance breakdown diodes, and low ESR (equivalent series resistance) devices.

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