
Allicdata Part #: | 1086-8203-ND |
Manufacturer Part#: |
MSMBJSAC45 |
Price: | $ 2.20 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 45V 77V DO214AA |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
321 +: | $ 2.00001 |
Specifications
Voltage - Clamping (Max) @ Ipp: | 77V |
Supplier Device Package: | SMBJ (DO-214AA) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | 30pF @ 1MHz |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 500W |
Current - Peak Pulse (10/1000µs): | 6.8A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 50V |
Voltage - Reverse Standoff (Typ): | 45V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
Description
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MSMBJ SAC45 is one of the most commonly used TVS-Diodes used in electronic devices and circuits. It is a bidirectional breakover diode which is used for protection against transient overvoltage and over-current events. It provides a low capacitance, low clamping voltage, fast response time and low leakage current.The SAC45 is semiconductor diode which is composed of a wide variety of elements including silicon dioxide (SiO2), aluminium oxide (Al2O3), arsenic (As), phosphorus (P), boron (B), magnesium (Mg) and copper (Cu). These materials are combined together in order to form a semiconductor structure which is capable of providing the required performance characteristics.The SAC45 has two p+ and n+ layers which are separated by a common silicon dioxide (SiO2) layer. The structural arrangement of these two layers allows for a predictable electric field to be established within them. This electric field is responsible for providing the desired performance characteristics of the particular device.The SAC45 structure is designed so that under normal operating conditions the device is nonconductive. However, when a voltage or current surge higher than a predetermined level is encountered, the electric field created within the semiconductor structure causes the p+ and n+ layers to switch on and form multiple junctions. This results in a “clamping” action which effectively limits the amount of voltage or current that can flow through the device. As such, it provides protection against voltage and current surges which may damage an electronic component or circuit.The SAC45 device is capable of responding quickly to voltage and current surges and, as such, is an ideal choice for protecting against transient overvoltage and overcurrent events. The fact that the SAC45 has a low capacitance, low clamping voltage, fast response time and low leakage current makes it even more suitable for protecting against these transient events.In addition, the SAC45 can be used to provide ESD protection on sensitive components such as ICs; as well as providing voltage protection on motor controllers; switching power supplies; and data lines. This is due to the fact that the SAC45 is optimized for fast response times and can quickly react to voltage transients.The SAC45 is an essential component in many electronic devices and circuits, providing reliable protection against transient overvoltage and over-current events. The fact that the device has a low capacitance, low clamping voltage, fast response time and low leakage current makes it an ideal choice for protecting against these events. Furthermore, the SAC45 is capable of providing ESD protection on sensitive electronic components, as well as offering protection on motor controllers, switching power supplies and data lines.The specific data is subject to PDF, and the above content is for reference
Related Products
Search Part number : "MSMB" Included word is 40
Part Number | Manufacturer | Price | Quantity | Description |
---|
MSMBJ78A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
MSMBG13CA/TR | Microsemi Co... | 1.01 $ | 1000 | TVS |
MSMBG10AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 10V 17V DO215AA |
MSMBG48CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 48V 77.4V DO215... |
MSMBJ40A | Microsemi Co... | 1.39 $ | 175 | TVS DIODE 40V 64.5V DO214... |
MSMBJ20CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
MSMBG20CA/TR | Microsemi Co... | 1.01 $ | 1000 | TVS |
MSMBG7.0AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 7V 12V DO215AA |
MSMBJ60AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
MSMBJ9.0CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 9V 15.4V DO214A... |
MSMBG15CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 15V 24.4V DO215... |
MSMBG6.5CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
MSMBJ150CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
MSMBJ5.0CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
MSMBJSAC75E3/TR | Microsemi Co... | 2.23 $ | 1000 | TVS |
MSMBJSAC75E3 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
MSMBG16CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 16V 26V DO215AA |
MSMBJ33CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
MSMBJ7.5CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
MSMBJ33A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 33V 53.3V DO214... |
MSMBJ75CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 75V 121V DO214A... |
MSMBG78CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 78V 126V DO215A... |
MSMBG120CAE3/TR | Microsemi Co... | 1.01 $ | 1000 | TVS |
MSMBJ51CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
MSMBJ8.5CA | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
MSMBG54A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 54V 87.1V DO215... |
MSMBG90A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 90V 146V DO215A... |
MSMBG58CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 58V 93.6V DO215... |
MSMBJ18CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
MSMBJ20A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
MSMBJ51CA | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
MSMBG160AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 160V 259V DO215... |
MSMBG6.0AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 6V 10.3V DO215A... |
MSMBJSAC7.0/TR | Microsemi Co... | 2.23 $ | 1000 | TVS |
MSMBG20CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
MSMBJ150AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 150V 243V DO214... |
MSMBG13A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 13V 21.5V DO215... |
MSMBG60A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 60V 96.8V DO215... |
MSMBJ15A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
MSMBJ33AE3/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
Latest Products
SMCJ6053/TR13
TVS DIODE 31V 56.4V DO214AB

VTVS8V5GSMF-HM3-18
TVS DIODE 8.5V 13.5V DO219AB

MRT100KP350CAE3
TVS DIODE 350V 690V CASE 5A

MRT100KP170CA
TVS DIODE 170V 334V CASE 5A

MP6KE8.2AE3
TVS DIODE 7.02V 12.1V T-18

MP5KE78AE3
TVS DIODE 78V 126V DO204AL
