
Allicdata Part #: | 1086-8216-ND |
Manufacturer Part#: |
MSMBJSAC8.0E3 |
Price: | $ 2.20 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 8V 13.4V DO214AA |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
321 +: | $ 2.00001 |
Voltage - Clamping (Max) @ Ipp: | 13.4V |
Supplier Device Package: | SMBJ (DO-214AA) |
Package / Case: | DO-214AA, SMB |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | 30pF @ 1MHz |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 500W |
Current - Peak Pulse (10/1000µs): | 36A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 8.89V |
Voltage - Reverse Standoff (Typ): | 8V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MSMBJSAC8.0E3 TVS - Diodes are widely used in various electronic applications such as computer, automobile, consumer electronics, telecommunications, defense, aerospace and industrial control. The application of MSMBJSAC8.0E3 TVS - Diodes can be observed in the circuit design and system layout of electronic products.
MSMBJSAC8.0E3 TVS - Diodes are designed with a twin-diode construction as its core component. The two diodes in the diode element are connected in series with an inner anode and an outer cathode. The interior anode is connected to the anode of an external diode, and the exterior cathode is connected to the cathode of an external diode. The external diodes are poled for voltage flow, allowing the diode element to switch between an open or close state as determined by the voltage polarity. The diode element is usually used in large numbers connected in parallel in order to achieve a desired level of current during the circuit operation.
MSMBJSAC8.0E3 TVS - Diodes are characterized by their fast switching speed and low forward voltage drop. The fast switching speed ensures low propagation losses and improved signal integrity, and the low forward voltage drop ensures low power dissipation and improved efficiency. The device is also robust and reliable under extreme voltage stress or environmental conditions due to its triple-layer structure. In addition, the device is able to operate in the temperature range of -55 to 150 °C without any risk of failure.
MSMBJSAC8.0E3 TVS - Diodes are typically used for protecting sensitive components from high-voltage transients, such as those caused by electrostatic discharge (ESD) or power surges. The device is also able to clamp high-voltage spikes within a specified limit, which helps to prevent further damage to the components or system. The device is also suitable for use in high-speed switching-mode power supplies (SMPS) as the load current is steered away from the sensitive components.
The MSMBJSAC8.0E3 TVS - Diodes are used in a variety of applications, such as surge protection on electrical lines, overvoltage protection in electronic devices, protection of telecommunications equipment, and EMI/RFI filtering. The device is also used in automotive, aviation, networking, and consumer electronics applications. It is also suitable for use in industrial safety circuits as the device is able to withstand high-temperature and voltage stress without any risk of failure.
In summary, the MSMBJSAC8.0E3 TVS - Diodes are designed with a twin-diode construction and are characterized by their fast switching speed and low forward voltage drop. They are used for a variety of applications, such as surge protection, EMI/RFI filtering, overvoltage protection, and protection from high-voltage transients. The device also has a robust and reliable structure, making it suitable for use in industrial safety circuits. It is widely used in various electronic applications such as automobiles, consumer electronics, telecommunications, and aerospace.
The specific data is subject to PDF, and the above content is for reference
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MSMBJ20CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
MSMBG20CA/TR | Microsemi Co... | 1.01 $ | 1000 | TVS |
MSMBG7.0AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 7V 12V DO215AA |
MSMBJ60AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
MSMBJ9.0CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 9V 15.4V DO214A... |
MSMBG15CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 15V 24.4V DO215... |
MSMBG6.5CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 6.5V 11.2V DO21... |
MSMBJ150CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
MSMBJ5.0CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
MSMBJSAC75E3/TR | Microsemi Co... | 2.23 $ | 1000 | TVS |
MSMBJSAC75E3 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 75V 121V DO214A... |
MSMBG16CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 16V 26V DO215AA |
MSMBJ33CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
MSMBJ7.5CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
MSMBJ33A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 33V 53.3V DO214... |
MSMBJ75CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 75V 121V DO214A... |
MSMBG78CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 78V 126V DO215A... |
MSMBG120CAE3/TR | Microsemi Co... | 1.01 $ | 1000 | TVS |
MSMBJ51CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
MSMBJ8.5CA | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
MSMBG54A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 54V 87.1V DO215... |
MSMBG90A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 90V 146V DO215A... |
MSMBG58CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 58V 93.6V DO215... |
MSMBJ18CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
MSMBJ20A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
MSMBJ51CA | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 51V 82.4V DO214... |
MSMBG160AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 160V 259V DO215... |
MSMBG6.0AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 6V 10.3V DO215A... |
MSMBJSAC7.0/TR | Microsemi Co... | 2.23 $ | 1000 | TVS |
MSMBG20CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 20V 32.4V DO215... |
MSMBJ150AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 150V 243V DO214... |
MSMBG13A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 13V 21.5V DO215... |
MSMBG60A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 60V 96.8V DO215... |
MSMBJ15A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
MSMBJ33AE3/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
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