MSMLG110CA Allicdata Electronics

MSMLG110CA Circuit Protection

Allicdata Part #:

1086-8769-ND

Manufacturer Part#:

MSMLG110CA

Price: $ 2.02
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 110V 177V DO215AB
More Detail: N/A
DataSheet: MSMLG110CA datasheetMSMLG110CA Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
350 +: $ 1.83334
Stock 1000Can Ship Immediately
$ 2.02
Specifications
Voltage - Clamping (Max) @ Ipp: 177V
Supplier Device Package: SMLG (DO-215AB)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 3000W (3kW)
Current - Peak Pulse (10/1000µs): 16.8A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 122V
Voltage - Reverse Standoff (Typ): 110V
Bidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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MSMLG110CA Application Field and Working Principle

The MSMLG110CA is a Transient Voltage Suppression (TVS) diode, which is designed for applications such as motor control, communication systems, electrical appliances, automotive electronics, and other high-voltage protection devices. The TVS diode is used to protect against overvoltage occurring when the input and output signals are out of range, also known as “common mode transient voltages” or “ground fault transients”.

Functionality of MSMLG110CA TVS Diode

MSMLG110CA TVS diode is intended to protect against overvoltage conditions. It works by diverting away the excess current that would normally cause damage to sensitive components. The diode’s PN junction is designed to reduce the overall transient voltage, allowing it to be safely discharged to ground. The PN junction also serves to isolate the excessive voltage from any other sensitive circuits. The device is designed to be used in systems running with high power, in order to protect any sensitive components from damage.

Features and Rated Voltage of MSMLG110CA TVS Diode

The MSMLG110CA TVS diode has a breakdown voltage of 110 Volts (V) and a rated voltage of 70V. It also has a current capability of up to 10 Amperes (A). The device is composed of two layers of PN junction and has a junction capacitance of between 30-40pF. The reverse breakdown voltage is in the range of 0.2V to 9V. The device also has a low leakage current of 10pA at 25°C for non-volatile application.

Structure of the MSMLG110CA

The MSMLG110CA TVS diode has a vertical structure with PN junction layers. It has an anode layer, a cathode layer and an exhaust layer. The anode layer is connected to the power supply and is composed of p-type material. The cathode layer allows for the flow of electrons and is composed of n-type material. The exhaust layer acts to discharge excess current away from the device.

Working Principle of the MSMLG110CA

The working principle of the MSMLG110CA is based on the PN junction structure. When a voltage is applied to the device, a depletion layer forms between the anode and the cathode layers. This depletion layer is an insulating layer, preventing the flow of current. As the voltage increases, the depletion layer also gets thinner, allowing more current to pass. As the voltage continues to increase, the depletion layer eventually breaks and conducts current until the breakdown voltage is reached.

As soon as the breakdown voltage is reached, a large current starts to flow through the device, so protection zener diodes and a discharge resistor is used to limit the current. After the overvoltage has been discharged, the device is reset and is ready for another overload condition. The device’s high peak pulse current capability and low dynamic resistance, ensure that the sensitive components are not damaged even when an overload occurs.

Conclusion

The MSMLG110CA TVS diode is designed to protect sensitive components from overvoltage conditions.The device is composed of two layers of PN junction and has a breakdown voltage of 110 Volts (V) and a rated voltage of 70V. The working principle of the device is based on the PN junction structure, which is designed to reduce the overall transient voltage, allowing it to be safely discharged. The device’s current capability and low dynamic resistance, ensure that the sensitive components are not damaged even when an overload occurs.

The specific data is subject to PDF, and the above content is for reference

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