MSMLG85AE3

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TVS - Diodes: MSMLG85AE3 Application Field and Working Principle

The MSMLG85AE3 is a sensitive bidirectional Silicon Avalanche TVS Diode specially designed for ESD (Electro Static Discharge) and EMI (Electro Magnetic Interference) protection. It is a monolithic integrated circuit which features 17 picosecond breakdown time when used with external pins. It is manufactured and supplied by Littelfuse, a market-leading provider of circuit protection technologies.

The MSMLG85AE3 is designed to protect high speed I/O ports and high reliability circuits from the effects of ESD and EMI. It is well suited for protecting devices such as wireless modems, mobile phones, bluetooth wireless headsets, automated test equipments, and other devices where ESD and EMI protection are required.

The MSMLG85AE3 consists of a highly reliable monolithically integrated silicon structure which provides the protection against transient voltage spikes and continuous Undervoltage conditions. It also features 17 picoseconds responds time, which makes it ideal for high speed I/O applications. The MSMLG85AE3 utilizes a field-oxide isolator to provide a high level of protection against destructive electrical transients.

The working principle of the MSMLG85AE3 is quite simple. It consists of two diodes connected in a reversed series configuration. Each diode when exposed to a high voltage, triggers the diode by creating a negative voltage spike across its cathode and anode. This sudden and large voltage spike causes an avalanche breakdown in the diode’s junction. The avalanche breakdown then neutralizes the voltage buildup of the initial high voltage, thereby separating the two diodes and protecting the circuit from further damage.

Furthermore, the MSMLG85AE3 is designed to offer a fast response time and low capacitance, thereby providing improved protection to high speed devices. It is also equipped with an ESD protection lip, which helps to absorb the high energy pulses caused by ESD strikes.

In conclusion, the MSMLG85AE3 is a specially designed TVS Diode for ESD and EMI protection. It offers a fast response time, low capacitance, and an ESD protection lip. It can be used in high speed I/O ports and high reliability circuits to protect them from transient voltage and overvoltage conditions. It is a reliable and cost effective solution for protecting devices from the destructive effects of ESD and EMI.

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